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參數(shù)資料
| 型號(hào)： | XM28C010PM-12 |
| 英文描述： | High Speed 5 Volt Byte Alterable Nonvolatile Memory Array |
| 中文描述： | 高速5伏可變字節(jié)非易失性存儲(chǔ)器陣列 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 25K |
| 代理商： | XM28C010PM-12 |
6491-1.3 8/12/97 T0/C2/D0 NS
Xicor, 1995, 1996 Patents Pending
1
Characteristics subject to change without notice
1 Megabit Puma Module
XM28C010P
32K x 32 Bit
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array
FEATURES
High Speed, High Density Memory Module
—150ns, 120ns, 90ns and 70ns Access Times
Available
—1 Megabit Memory in 1 square inch.
Flexible Multiplane Architecture
—Four Separate Chip Selects
—32 Separate I/Os
User Configurable I/Os—x8, x16, or x32
User Configurable Page Size—64 Double-
words, 128 Words, or 256 Bytes
—Concurrent Read/Write Operations
Able to Continue Reading During a
Nonvolatile Write Cycle.
5 Volt Byte or Page Alterable
—No Erase Before Write
Software Data Protection
Early End of Write Polling
—DATA Polling
—Toggle Bit Polling
High Reliability
—Endurance: 100,000 Cycles
—Data Retention: 100 Years
DESCRIPTION
The XM28C010P is a high speed, high density CMOS
byte alterable nonvolatile memory array constructed on
a co-fired ceramic substrate using Xicor’s High Speed
32K x 8 components in 32-pad leadless chip carriers.
The Substrate is a 66-pin ceramic pin grid array.
The module is configured with four separate chip
enable and write enable inputs and 32 separate I/Os.
This, along with the small footprint, provides the end
user with a large degree of flexibility in board layout and
memory configuration. In addition, with the large num-
ber of pins and the growth path being implemented, the
module will be able to grow to 16 megabits.
FUNCTIONAL DIAGRAM
32k x 8
A0–A15
I/O0–I/O7
OE
WE1
CE1
WE2
CE2
WE3
CE3
WE4
CE4
I/O8–I/O15
I/O16–I/O23
I/O24–I/O31
32k x 8
32k x 8
32k x 8
6491 ILL F01
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| XM28C010PM-15 | High Speed 5 Volt Byte Alterable Nonvolatile Memory Array |
| XM28C010PM-20 | High Speed 5 Volt Byte Alterable Nonvolatile Memory Array |
| XM28C010P-12 | High Speed 5 Volt Byte Alterable Nonvolatile Memory Array |
| XM28C020I-12 | 5 Volt, Byte Alterable E2PROM |
| XM28C020PM-20 | 5 Volt, Byte Alterable E2PROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XM28C010PM-15 | 制造商:XICOR 制造商全稱(chēng):Xicor Inc. 功能描述:High Speed 5 Volt Byte Alterable Nonvolatile Memory Array |
| XM28C010PM-20 | 制造商:XICOR 制造商全稱(chēng):Xicor Inc. 功能描述:High Speed 5 Volt Byte Alterable Nonvolatile Memory Array |
| XM28C010PM-70 | 制造商:XICOR 制造商全稱(chēng):Xicor Inc. 功能描述:High Speed 5 Volt Byte Alterable Nonvolatile Memory Array |
| XM28C010PM-90 | 制造商:XICOR 制造商全稱(chēng):Xicor Inc. 功能描述:High Speed 5 Volt Byte Alterable Nonvolatile Memory Array |
| XM28C010PMHR-12 | 制造商:XICOR 制造商全稱(chēng):Xicor Inc. 功能描述:High Speed 5 Volt Byte Alterable Nonvolatile Memory Array |
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