參數(shù)資料
型號: XM28C020I-12
英文描述: 5 Volt, Byte Alterable E2PROM
中文描述: 5伏,可變E2PROM的字節(jié)
文件頁數(shù): 1/16頁
文件大小: 74K
代理商: XM28C020I-12
XM28C020
1
5 Volt, Byte Alterable E
2
PROM
Xicor, Inc. 1991, 1995, 1996 Patents Pending
3872-1.9 6/18/97 T1/C0/D0 SH
Characteristics subject to change without notice
TYPICAL FEATURES
High Density 2 Megabit (256K x 8) Module
Access Time of 150ns at –55
°
C to +125
°
C
Base Memory Component: Xicor X28C513
Pinout conforms to JEDEC Standard for
2 Megabit E
2
PROM
Fast Write Cycle Times
—128 Byte Page Write
—Byte or Page Write Cycle: 5ms Typical
—Complete Memory Rewrite: 10 Seconds
Early End of Write Detection
DATA
Polling
—Toggle Bit Polling
Software Data Protection
Three Temperature Ranges
—Commercial: 0
°
C to +75
°
C
—Industrial: –40
°
to +85
°
C
—Military: –55
°
to +125
°
C
High Rel Module
—100% MIL-STD-883 Compliant Components
Endurance: 100,000 Cycles
DESCRIPTION
The XM28C020 is a high density 2 Megabit E
2
PROM
comprised of four X28C513 LCCs mounted on a co-fired
multilayered ceramic substrate. Individual components
are 100% tested prior to assembly in module form and
then 100% tested after assembly.
The XM28C020 is configured 256K x 8 bit. The module
supports a 128-byte page write operation. This com-
bined with
DATA
Polling or Toggle Bit Polling, effectively
provides a 39
μ
s/byte write cycle, enabling the entire
array to be rewritten in 10 seconds.
The XM28C020 provides the same high endurance and
data retention as the X28C513.
3872 FHD F01
WE
CE
OE
A16
A17
I/O0–I/O7
X28C513
A0–A15
I/O0–I/O7
CE
WE
OE
X28C513
A0–A15
I/O0–I/O7
CE
WE
OE
X28C513
A0–A15
I/O0–I/O7
CE
WE
OE
X28C513
A0–A15
I/O0–I/O7
CE
WE
OE
A0–A15
2 Megabit Module
XM28C020
256K x 8 Bit
FUNCTIONAL DIAGRAM
PIN CONFIGURATION
3872 FHD F02
NC
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
WE
A17
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/04
I/O3
XM28C020
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