參數(shù)資料
型號: XN1B301
英文描述: Composite Device - Composite Transistors
中文描述: 復(fù)合設(shè)備-復(fù)合晶體管
文件頁數(shù): 3/5頁
文件大?。?/td> 205K
代理商: XN1B301
XN
0
C301
3
I
C
V
BE
h
FE
I
C
V
CE(sat)
I
C
h Parameter
I
E
h Parameter
V
CE
f
T
I
E
C
ob
V
CB
0
0
2.0
1.6
V
BE
(V)
1.2
0.8
0.4
240
200
160
120
80
40
C
V
CE
=
5 V
T
a
=
75
°
C
25
°
C
25
°
C
0.001
0.003
1
3
0.01
0.03
0.1
0.3
1
3
10
10
30
100
300
1
000
I
C
(mA)
C
I
C
/ I
B
=
10
T
a
=
75
°
C
25
°
C
25
°
C
0
1
3
600
500
400
300
200
100
10
30
100
300
1
000
I
C
(mA)
F
V
CE
=
10 V
T
a
=
75
°
C
25
°
C
25
°
C
0
0.1
0.3
40
80
120
160
140
100
60
20
1
3
10
30
100
T
I
E
(mA)
V
CB
=
10 V
T
a
=
25
°
C
0
1
5
20
2
8
7
6
5
4
3
2
1
3
50
10
30
V
CB
(V)
100
o
f
=
1 MHz
I
E
=
0
T
a
=
25
°
C
NF
I
E
0
0.03
6
5
4
3
2
1
0.1
0.3
1
3
10
I
E
(mA)
V
CB
=
5 V
f
=
1 kHz
R
g
=
2 k
T
a
=
25
°
C
NF
I
E
0
0.1
20
2
18
4
6
8
10
12
14
16
0.3
1
3
10
2
0.5
0.2
5
I
E
(mA)
V
CB
=
5 V
R
g
=
50 k
T
a
=
25
°
C
f
=
100 Hz
10 kHz
1 kHz
1
0.1
2
3
5
10
20
30
50
100
200
300
0.3
1
3
10
2
0.5
0.2
5
I
E
(mA)
V
CE
=
5 V
f
=
270 Hz
T
a
=
25
°
C
h
fe
h
oe
(
μ
S)
h
ie
(k
)
h
re
(
×
10
4
)
1
0.1
2
3
5
10
20
30
50
100
200
300
0.3
1
3
10
2
0.5
0.2
5
V
CE
(V)
I
E
=
2 mA
f
=
270 Hz
T
a
=
25
°
C
h
fe
h
oe
(
μ
S)
h
ie
(k
)
h
re
(
×
10
4
)
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