參數(shù)資料
型號: XN1B301
英文描述: Composite Device - Composite Transistors
中文描述: 復(fù)合設(shè)備-復(fù)合晶體管
文件頁數(shù): 4/5頁
文件大?。?/td> 205K
代理商: XN1B301
XN
0
C301
4
Tr2
I
C
I
B
I
C
V
CE
I
B
V
BE
0
0
10
2
4
8
6
60
50
40
30
20
10
V
CE
(V)
C
T
a
=
25
°
C
I
B
=
160
μ
A
140
μ
A
120
μ
A
100
μ
A
80
μ
A
60
μ
A
40
μ
A
20
μ
A
0
0
1
000
800
600
I
B
(
μ
A)
400
200
240
200
160
120
80
40
C
V
CE
=
10 V
T
a
=
25
°
C
0
0
1.0
0.8
0.6
0.4
0.2
1
200
1
000
800
600
400
200
V
BE
(V)
B
μ
A
V
CE
=
10 V
T
a
=
25
°
C
I
C
V
BE
h
FE
I
C
V
CE(sat)
I
C
0
0
2.0
1.6
1.2
0.8
0.4
240
200
160
120
80
40
V
BE
(V)
C
V
CE
=
10 V
T
a
=
75
°
C
25
°
C
25
°
C
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
C
I
C
(mA)
IC / IB
=
10
T
a
=
75
°
C
25
°
C
25
°
C
0
0.1
0.3
600
500
400
300
200
100
1
3
10
30
100
F
I
C
(mA)
V
CE
=
10 V
T
a
=
75
°
C
25
°
C
25
°
C
0
0.1
0.3
300
240
180
120
60
1
3
10
30
100
T
I
E
(mA)
V
CB
=
10 V
T
a
=
25
°
C
f
T
I
E
NV
I
C
0
10
240
200
160
120
80
40
30
100
300
1
000
50
500
20
200
I
C
(
μ
A)
V
CE
=
10 V
G
=
80 dB
Function
=
FLAT
T
a
=
25
°
C
4.7 k
R
g
=
100 k
22 k
相關(guān)PDF資料
PDF描述
XN0B301(XN1B301) 複合デバイス - 複合トランジスタ
XN0C301(XN1C301) 複合デバイス - 複合トランジスタ
XN0D873 Composite Device - Composite Transistors
XN1D873 Composite Device - Composite Transistors
XN0D873(XN1D873) Composite Device - Transistors with built-in Resistor
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