參數(shù)資料
型號(hào): XN4609
英文描述: Composite Device - Composite Transistors
中文描述: 復(fù)合設(shè)備-復(fù)合晶體管
文件頁數(shù): 1/6頁
文件大小: 135K
代理商: XN4609
Composite Transistors
XN04601
(XN4601)
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
1
Publication date: February 2004
SJJ00083BED
For general amplification
Features
Two elements incorporated into one package
Reduction of the mounting area and assembly cost by one half
Basic Part Number
2SD0601A (2SD601A)
+
2SB0709A (2SB709A)
Absolute Maximum Ratings
T
a
=
25
°
C
Marking Symbol: 5C
Internal Connection
Tr2
Tr1
5
4
3
2
1
6
Note) The part number in the parenthesis shows conventional part number.
Parameter
Symbol
Rating
Unit
Tr1
Collector-base voltage
(Emitter open)
V
CBO
60
V
Collector-emitter voltage
(Base open)
V
CEO
50
V
Emitter-base voltage
(Collector open)
V
EBO
7
V
Collector current
I
C
I
CP
V
CBO
100
mA
Peak collector current
200
60
mA
Tr2
Collector-base voltage
(Emitter open)
V
Collector-emitter voltage
(Base open)
V
CEO
50
V
Emitter-base voltage
(Collector open)
V
EBO
7
V
Collector current
I
C
100
200
mA
Peak collector current
I
CP
P
T
mA
Overall
Total power dissipation
300
mW
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Unit: mm
1: Collector (Tr1)
2: Base (Tr2)
3: Emitter (Tr2)
EIAJ: SC-74
4: Collector (Tr2)
5: Base (Tr1)
6: Emitter (Tr1)
Mini6-G1 Package
2.90
1.9
±
(0.95)
0.16
+0.10
2
+
1
+
1
0
+
1
(
0
±
0
+
0.30
+0.10
0.50
+0.10
(0.95)
6
5
4
1
3
2
+0.20
5
10
相關(guān)PDF資料
PDF描述
XN04683 Composite Device - Composite Transistors
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