參數(shù)資料
型號: XP132A1275SR
廠商: TOREX SEMICONDUCTOR LTD.
英文描述: CONTACT
中文描述: 功率MOS場效應(yīng)管
文件頁數(shù): 1/4頁
文件大小: 55K
代理商: XP132A1275SR
u
P-Channel Power MOS FET
DMOS Structure
Low On-State Resistance : 0.075
(max)
Ultra High-Speed Switching
SOP - 8 Package
Applications
Notebook PCs
Cellular and portable phones
On - board power supplies
Li - ion battery systems
General Description
Features
The XP132A1275SR is a P-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently
set thereby saving energy.
The small SOP-8 package makes high density mounting possible.
Low on-state resistance :
Rds (on) = 0.075
( Vgs = -4.5V )
Rds (on) = 0.115
( Vgs = -2.5V )
Ultra high-speed switching
Operational Voltage :
-2.5V
High density mounting :
SOP - 8
Pin Configuration
Pin Assignment
PIN NUMBER
1 - 3
4
PIN NAME
S
G
D
Source
Gate
Drain
5 - 8
D
Equivalent Circuit
Absolute Maximum Ratings
Ta=25
O
C
UNITS
SYMBOL
RATINGS
Vdss
Vgss
Id
Idp
Idr
Pd
-20
+ 12
-5
-20
-5
2.5
V
V
A
A
A
W
Tch
Tstg
150
O
C
-55 to 150
O
C
P - Channel MOS FET
( 1 device built-in )
( note ) : When implemented on a glass epoxy PCB
Storage Temperature
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
FUNCTION
PARAMETER
D
D
S
S
S
G
D
SOP - 8 Top View
7
6
5
1
2
3
4
8
7
6
5
1
2
3
4
8
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