參數(shù)資料
型號: XP133A1330SR
廠商: TOREX SEMICONDUCTOR LTD.
英文描述: N-Channel Power MOS FET
中文描述: N溝道功率MOS場效應(yīng)管
文件頁數(shù): 1/4頁
文件大?。?/td> 190K
代理商: XP133A1330SR
767
11
PIN
NUMBER
PIN
NAME
FUNCTION
1
3
2
S1
S2
G1
Source
Source
Gate
4
7~8
5~6
G2
D1
D2
Gate
Drain
Drain
N
N-Channel Power MOS FET
N
DMOS Structure
N
Low On-State Resistance : 0.03
(max)
N
Ultra High-Speed Switching
N
SOP-8 Package
N
Two FET Devices Built-in
G
Notebook PCs
G
Cellular and portable phones
G
On-board power supplies
G
Li-ion battery systems
The XP133A1330SR is an N-Channel Power MOS FET with low on-
state resistance and ultra high-speed switching characteristics.
Two FET devices are built into the one package.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOP-8 package makes high density mounting possible.
Low on-state resistance
: Rds (on) = 0.03
( Vgs = 4.5V )
: Rds (on) = 0.04
( Vgs = 2.5V )
: Rds (on) = 0.07
( Vgs = 1.5V )
Ultra high-speed switching
Operational Voltage
: 1.5V
High density mounting
: SOP-8
Ta=25
O
C
UNITS
SYMBOL
RATINGS
Vdss
Vgss
Id
Idp
Idr
Pd
20
+ 8
6
20
6
2
V
V
A
A
A
W
Tch
Tstg
150
O
C
- 55 ~ 150
O
C
( note ) : When implemented on a glass epoxy PCB
PARAMETER
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
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