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參數(shù)資料
| 型號： | XP134A02A1SR |
| 廠商： | TOREX SEMICONDUCTOR LTD. |
| 英文描述： | P-Channel Power MOS FET |
| 中文描述： | P溝道功率MOS場效應(yīng)管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 154K |
| 代理商： | XP134A02A1SR |
792
11
DC Characteristics
PARAMETER
Drain Cut-off Current
Ta=25
:
UNITS
μ
A
Gate-Source Cut-off Voltage
Vgs(off)
-0.5
-1.2
0.11
V
0.2
0.14
Id=-2A, Vgs=-2.5V
Gate-Source Leakage Current
Igss
μ
A
±
1
Forward Transfer Admittance
(note)
5.5
S
Body Drain Diode
Forward Voltage
-0.85
-1.1
V
Idss
-10
Vf
Vds=-20V, Vgs=0V
Vgs=
±
12V, Vds=0V
Id=-1mA, Vds=-10V
Id=-2A, Vgs=-4.5V
Id=-2A, Vds=-10V
If=-4A, Vgs=0V
Drain-Source On-state
Resistance (note)
Rds(on)
0.08
SYMBOL
CONDITIONS
MAX
MIN
TYP
PARAMETER
Input Capacitance
UNITS
pF
Feedback Capacitance
Crss
pF
Output Capacitance
Coss
pF
Ciss
200
550
800
Vds=-10V, Vgs=0V
f=1MHz
SYMBOL
CONDITIONS
MAX
MIN
TYP
Dynamic Characteristics
Ta=25
:
Effective during pulse test.
Note:
Yfs
PARAMETER
Turn-on Delay Time
UNITS
ns
Fall Time
tf
ns
Rise Time
Turn-off Delay Time
tr
ns
ns
td (on)
15
td (off)
30
25
15
Vgs=-5V, Id=-2A
Vdd=-10V
SYMBOL
CONDITIONS
MAX
MIN
TYP
Switching Characteristics
Ta=25
:
PARAMETER
Thermal Resistance
(channel-ambience)
UNITS
Rth (ch-a)
62.5
:
/W
Implement on a glass epoxy
resin PCB
SYMBOL
CONDITIONS
MAX
MIN
TYP
Thermal Characteristics
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