參數(shù)資料
型號(hào): XP134A02A1SR
廠商: TOREX SEMICONDUCTOR LTD.
英文描述: P-Channel Power MOS FET
中文描述: P溝道功率MOS場(chǎng)效應(yīng)管
文件頁(yè)數(shù): 4/4頁(yè)
文件大小: 154K
代理商: XP134A02A1SR
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GATE-SOURCE VOLTAGE vs. GATE CHARGE
Vds=-10V, Id=-4A
G
Gate Charge:Qg (nc)
REVERSE DRAIN CURRENT
vs. SOURCE-DRAIN VOLTAGE
Pulse Test
R
Source-Drain Voltage:Vsd (V)
STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH
Rth (ch-a)=62.5C/W, (Implemented on a glass epoxy PCB)
Pulse Width:PW (sec)
Single Pulse
CAPACITANCE vs. DRAIN-SOURCE VOLTAGE
Vgs=0V, f=1MHz
C
Drain-Source Voltage:Vds (V)
SWITCHING TIME vs. DRAIN CURRENT
μ
S
Drain Current:Id (A)
相關(guān)PDF資料
PDF描述
XQ1000-BD 5.5-6.5 GHz GaAs MMIC Voltage Controlled Oscillator
XQ1000-BD-000V 5.5-6.5 GHz GaAs MMIC Voltage Controlled Oscillator
XQ1000-BD-EV1 5.5-6.5 GHz GaAs MMIC Voltage Controlled Oscillator
XQ1001-BD 5.8-6.9 GHz GaAs MMIC Voltage Controlled Oscillator
XQ1001-BD-000V 5.8-6.9 GHz GaAs MMIC Voltage Controlled Oscillator
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