參數(shù)資料
型號(hào): XP162A11COPR
廠商: TOREX SEMICONDUCTOR LTD.
英文描述: Power MOS FET
中文描述: 功率MOS場效應(yīng)管
文件頁數(shù): 1/4頁
文件大小: 52K
代理商: XP162A11COPR
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P-Channel Power MOS FET
DMOS Structure
Low On-State Resistance : 0.28
(max)
Ultra High-Speed Switching
Gate Protect Diode Built-in
SOT - 89 Package
Applications
Notebook PCs
Cellular and portable phones
On - board power supplies
Li - ion battery systems
General Description
Features
The XP162A11COPR is a P-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently
set thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-89 package makes high density mounting possible.
Low on-state resistance :
Rds (on) = 0.15
( Vgs = -10V )
Rds (on) = 0.28
( Vgs = -4.5V )
Ultra high-speed switching
Operational Voltage :
-4.5V
Gate protect diode built-in
High density mounting :
SOT - 89
Pin Configuration
Pin Assignment
PIN NUMBER
1
PIN NAME
G
D
S
Gate
Drain
Source
Equivalent Circuit
Absolute Maximum Ratings
Ta=25
O
C
UNITS
SYMBOL
RATINGS
Vdss
Vgss
Id
Idp
Idr
Pd
-30
+ 20
-2.5
-10
-2.5
2
V
V
A
A
A
W
Tch
Tstg
150
O
C
-55 to 150
O
C
P - Channel MOS FET
( 1 device built-in )
( note ) : When implemented on a ceramic PCB
FUNCTION
2
3
PARAMETER
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
SOT - 89 Top View
2
D
3
S
G
1
1
2
3
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