參數(shù)資料
型號(hào): XP8081
英文描述: Composite Device - Composite Transistors
中文描述: 復(fù)合設(shè)備-復(fù)合晶體管
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 110K
代理商: XP8081
Composite Transistors
XP08081
(XP8081)
Silicon n-channel junction FET (Tr1)
Silicon NPN epitaxial planar type (Tr2)
1
Publication date: February 2004
SJJ00218BED
For analog switching (Tr1)/switching (Tr2)
Features
Two elements incorporated into one package
(Tr
+
Transistors with built-in resistor)
Reduction of the mounting area and assembly cost by one half
Basic Part Number
2SK1103
+
UNR2213 (UN2213)
Absolute Maximum Ratings
T
a
=
25
°
C
Marking Symbol: 9Z
Internal Connection
Unit: mm
4
Tr1
Tr2
5
6
1
3
2
5
10
2
±
0
1
±
0
1
3
2
0.2
±
0.05
0.12
+0.05
0
±
0
(
1.3
±
0.1
2.0
±
0.1
0
0
±
0
0
+
6
5
4
(0.65) (0.65)
Parameter
Symbol
Rating
Unit
Tr1
Gate-drain surrender voltage
V
GDS
I
D
50
V
Drain current
20
mA
Gate current
I
G
10
mA
Tr2
Collector-base voltage
(Emitter open)
V
CBO
50
V
Collector-emitter voltage
(Base open)
V
CEO
50
V
Collector current
I
C
100
mA
Overall
Total power dissipation
P
T
150
mW
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
1: Drain (Tr1)
2: Source (Tr1)
3: Collector (Tr2)
EIAJ: SC-88
4: Emitter (Tr2)
5: Base (Tr2)
6: Gate (Tr1)
SMini6-G1 Package
Note) The part number in the parenthesis shows conventional part number.
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