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參數(shù)資料
| 型號： | XP8081 |
| 英文描述： | Composite Device - Composite Transistors |
| 中文描述： | 復合設備-復合晶體管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 110K |
| 代理商： | XP8081 |
XP08081
2
SJJ00218BED
■
Electrical Characteristics
T
a
=
25
°
C
±
2
°
C
Tr1
Tr2
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Gate-drain surrender voltage
V
GDS
I
G
=
10
μ
A, V
DS
=
0
V
DS
=
10
V, V
GS
=
0
V
GS
=
30 V, V
DS
=
0
V
DS
=
10 V, I
D
=
10
μ
A
V
DS
=
10 V, I
D
=
1 mA, f
=
1 kHz
V
DS
=
10 mV, V
GS
=
0
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
50
V
Drain-source cutoff current
I
DSS
0.2
2.2
mA
Gate-source cutoff current
I
GSS
V
GSC
10
1.0
nA
Gate-source cutoff voltage
V
Mutual conductance
gm
1.8
2.5
mS
Drain-source ON resistance
R
DS(on)
C
iss
400
pF
Short-circuit forward transfer capacitance
(Common source)
7
Reverse transfer capacitance
(Common source)
C
rss
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
1.5
pF
Short-circuit output capacitance
(Common source)
C
oss
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
1.5
pF
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
V
CEO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
10 V, I
C
=
5 mA
I
C
=
10 mA, I
B
=
0.3 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
3.5 V, R
L
=
1 k
50
V
Collector-emitter voltage (Base open)
50
V
Collector-base cutoff current (Emitter open)
I
CBO
0.1
μ
A
μ
A
Collector-emitter cutoff current (Base open)
I
CEO
I
EBO
h
FE
0.5
Emitter-base cutoff current (Collector open)
0.1
mA
Forward current transfer ratio
80
Collector-emitter saturation voltage
V
CE(sat)
0.25
V
Output voltage high-level
V
OH
V
OL
4.9
V
Output voltage low-level
0.2
V
Input resistance
R
1
30%
47
+
30%
k
Resistance ratio
R
1
/ R
2
f
T
0.8
1.0
1.2
Transition frequency
V
CB
=
10 V, I
E
=
1 mA, f
=
200 MHz
150
MHz
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