R
XQR4000XL RAM Synchronous (Edge-Triggered) Write Operation Guidelines
Testing of switching parameters is modeled after testing
methods specified by MIL-M-38510/605. All devices are
100% functionally tested. Internal timing parameters are
derived from measuring internal test patterns. Listed below
are representative values. For more specific, more precise,
and worst-case guaranteed data, use the values reported
by the static timing analyzer (TRCE in the Xilinx Develop-
ment System) and back-annotated to the simulation netlist.
All timing parameters assume worst-case operating condi-
tions (supply voltage and junction temperature). Values
apply to all XQR4000XL devices and are expressed in
nanoseconds unless otherwise noted.
Single-Port RAM Synchronous (Edge-Triggered) Write Operation Characteristics
Symbol
Single Port RAM
Size
-3
Units
Min
Max
Write Operation
T
WCS
T
WCTS
T
WPS
T
WPTS
T
ASS
T
ASTS
T
AHS
T
AHTS
T
DSS
T
DSTS
T
DHS
T
DHTS
T
WSS
T
WSTS
T
WHS
T
WHTS
T
WOS
T
WOTS
Read Operation
Address write cycle time (clock K period)
16x2
9.0
-
ns
32x1
9.0
-
ns
Clock K pulse width (active edge)
16x2
4.5
-
ns
32x1
4.5
-
ns
Address setup time before clock K
16x2
2.2
-
ns
32x1
2.2
-
ns
Address hold time after clock K
16x2
0
-
ns
32x1
0
-
ns
D
IN
setup time before clock K
16x2
2.0
-
ns
32x1
2.5
-
ns
D
IN
hold time after clock K
16x2
0
-
ns
32x1
0
-
ns
WE setup time before clock K
16x2
2.0
-
ns
32x1
1.8
-
ns
WE hold time after clock K
16x2
0
-
ns
32x1
0
-
ns
Data valid after clock K
16x2
-
6.8
ns
32x1
-
8.1
ns
T
RC
T
RCT
T
ILO
T
IHO
T
ICK
T
IHCK
Address read cycle time
16x2
4.5
-
ns
32x1
6.5
-
ns
Data valid after address change (no Write Enable)
16x2
-
1.6
ns
32x1
-
2.7
ns
Address setup time before clock K
16x2
1.1
-
ns
32x1
2.2
-
ns
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