參數(shù)資料
型號(hào): ZX3CDBS1M832
文件頁數(shù): 3/9頁
文件大?。?/td> 344K
代理商: ZX3CDBS1M832
ZX3CDBS1M832
ISSUE 1 - JUNE 2002
3
0.1
1
10
0.01
0.1
1
10
0
25
50
Temperature(°C)
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
1m
10m 100m
PulseWidth(s)
1
10
100
1k
20
40
60
80
0.1
1
10
100
0
25
50
75
100
125
150
175
200
225
0.1
1
10
100
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Note(a)(f)
100us
100ms
1s
V
Limited
1ms
SafeOperatingArea
SinglePulse, T
amb
=25°C
DC
10ms
I
C
C
V
CE
Collector-EmitterVoltage(V)
1ozCu
Note(d)(f)
1ozCu
Note(d)(g)
2ozCu
Note(a)(f)
2ozCu
Note(e)(g)
DeratingCurve
T
amb
=25°C
M
Note(a)(f)
D=0.2
D=0.5
D=0.1
TransientThermalImpedance
SinglePulse
D=0.05
T
1ozcopper
Note(g)
1ozcopper
Note(f)
2ozcopper
Note(f)
2ozcopper
Note(g)
ThermalResistancevBoardArea
T
BoardCuArea(sqcm)
1ozcopper
Note(g)
2ozcopper
Note(g)
1ozcopper
Note(f)
2ozcopper
Note(f)
PowerDissipationvBoardArea
T
amb
=25°C
T
=150°C
Continuous
P
D
D
BoardCuArea(sqcm)
TRANSISTOR TYPICAL CHARACTERISTICS
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