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參數(shù)資料
| 型號： | ZX3CDBS1M832 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 344K |
| 代理商： | ZX3CDBS1M832 |
ZX3CDBS1M832
ISSUE 1 - JUNE 2002
4
PARAMETER
SYMBOL
VALUE
UNIT
Schottky Diode
Continuous Reverse Voltage
V
R
V
F
I
F
I
FAV
I
FSM
40
V
Forward Voltage @ I
F
=1000mA(typ)
Forward Current
425
A
1850
mA
Average Peak Forward Current D=50%
Non Repetitive Forward Current t
≤
100 s
3
A
t
≤
10ms
12
7
A
A
Power Dissipation at TA=25°C (a)(f)
Linear Derating Factor
P
D
1.2
12
W
mW/°C
Power Dissipation at TA=25°C (b)(f)
Linear Derating Factor
P
D
2
20
W
mW/°C
Power Dissipation at TA=25°C (c)(f)
Linear Derating Factor
P
D
0.8
8
W
mW/°C
Power Dissipation at TA=25°C (d)(f)
Linear Derating Factor
P
D
0.9
9
W
mW/°C
Power Dissipation at TA=25°C (d)(g)
Linear Derating Factor
P
D
1.36
13.6
W
mW/°C
Power Dissipation at TA=25°C (e)(g)
Linear Derating Factor
P
D
2.4
24
W
mW/°C
Storage Temperature Range
T
stg
T
j
-55 to +150
°C
Junction Temperature
125
°C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)(f)
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
83
°C/W
Junction to Ambient (b)(f)
51
°C/W
Junction to Ambient (c)(f)
125
°C/W
Junction to Ambient (d)(f)
111
°C/W
Junction to Ambient (d)(g)
73.5
°C/W
Junction to Ambient (e)(g)
41.7
°C/W
THERMAL RESISTANCE
Notes
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with all exposed pads attached
. The
copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with all exposed
pads attached.
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions
with all exposed pads attached
attached
. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with all exposed pads attached
attached
. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For a dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm
wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 400mW.
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| ZX3CDBS1M832TA | 功能描述:兩極晶體管 - BJT PNP 20V/1A Sch Comb RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| ZX3CDBS1M832TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 4.5A I(C) | LLCC |
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| ZX3V3 | 制造商:YEASHIN 制造商全稱:YEASHIN 功能描述:500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators |
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