參數(shù)資料
型號: ZXMN2AM832(1)
文件頁數(shù): 2/4頁
文件大?。?/td> 85K
代理商: ZXMN2AM832(1)
PROVISIONAL ISSUE B - J UNE 2001
ZXMN2A01F
2
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DS S
V
GS
I
D
20
V
Gate Source Voltage
12
V
Continuous Drain Current V
GS
=4.5V; T
A
=25°C(b)
V
GS
=4.5V; T
A
=70°C(b)
V
GS
=4.5V; T
A
=25°C(a)
2.09
1.67
1.84
A
Pulsed Drain Current (c)
I
DM
I
S
I
S M
P
D
10
A
Continuous Source Current (Body Diode) (b)
1.05
A
Pulsed Source Current (Body Diode)(c)
10
A
Power Dissipation at T
A
=25°C (a)
Linear Derating Factor
625
5
mW
mW/°C
Power Dissipation at T
A
=25°C (b)
Linear Derating Factor
P
D
806
6.4
mW
mW/°C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
J unction to Ambient (a)
R
θ
J A
200
°C/W
J unction to Ambient (b)
R
θ
J A
155
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature.
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