參數(shù)資料
型號(hào)： ZXMN2AM832(1)
文件頁數(shù)： 3/4頁
文件大小： 85K
代理商： ZXMN2AM832(1)
PROVISIONAL ISSUE B - J UNE 2001
ZXMN2A01F
3
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX .
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DS S
20
V
I
D
=250
μ
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DS S
1
μ
A
V
DS
=20V, V
GS
=0V
Gate-Body Leakage
I
GS S
100
nA
V
GS
=
±
12V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS (th)
0.7
V
I
D
=250
μ
A, V
DS
= V
GS
Static Drain-Source On-State Resistance
(1)
R
DS (on)
0.09
0.12
0.30
V
GS
=4.5V, I
D
=4A
V
GS
=2.5V, I
D
=1.5A
Forward Transconductance (3)
g
fs
6.2
S
V
DS
=10V,I
D
=4A
DYNAMIC
(3)
Input Capacitance
C
iss
299
pF
V
=15 V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
60
pF
Reverse Transfer Capacitance
C
rss
33
pF
SWITCHING
(2) (3)
Turn-On Delay Time
t
d(on)
2.31
ns
V
DD
=10V, I
D
=4A
R
G
=6.0
, V
GS
=5V
Rise Time
t
r
2.60
ns
Turn-Off Delay Time
t
d(off)
1.55
ns
Fall Time
t
f
1.31
ns
Total Gate Charge
Q
g
3.1
nC
V
DS
=10V,V
GS
=4.5V,
I
D
=4A
Gate-Source Charge
Q
gs
0.7
nC
Gate-Drain Charge
Q
gd
1.0
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
S D
0.84
0.95
V
T
J
=25°C, I
S
=0.6A,
V
GS
=0V
Reverse Recovery Time (3)
t
rr
11.2
ns
T
=25°C, I
=4A,
di/dt= 100A/
μ
s
Reverse Recovery Charge (3)
Q
rr
3.64
nC
NOTES
(1) Measured under pulsed conditions. Width
≤
300
μ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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ZXMN2B01FTA 功能描述:MOSFET 20V N-Channel MOSFET w/low gate drive cap RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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