參數(shù)資料
型號(hào)： ZXMN6A09DN8(1)
文件頁數(shù)： 2/7頁
文件大?。?/td> 194K
代理商： ZXMN6A09DN8(1)
ZXMN6A11Z
ISSUE 1 - DECEMBER 2002
2
PARAMETER
SYMBOL
VALUE
UNIT
J unction to Ambient (a)
R
θ
J A
83.3
°C/W
J unction to Ambient (b)
R
θ
J A
47.4
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b)For a device surface mounted on FR4 PCB measured at t
≤
10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300 s - pulse width limited by maximum junction temperature. Refer to
transient Thermal Impedance graph
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDSS
VGS
ID
60
V
Gate Source Voltage
20
V
Continuous Drain Current @ VGS=10V; TA=25°C (b)
@ VGS=10V; TA=70°C (b)
@ VGS=10V; TA=25°C (a)
3.2
2.6
2.4
A
Pulsed Drain Current (c)
IDM
IS
ISM
PD
12.3
A
Continuous Source Current (Body Diode) (b)
5.0
A
Pulsed Source Current (Body Diode) (c)
12.3
A
Power Dissipation at TA=25°C (a)
Linear Derating Factor
1.5
12
W
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor
PD
2.6
21
W
mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated.
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