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| 型號(hào)： | ZXMN6A11Z |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大?。?/td> | 194K |
| 代理商： | ZXMN6A11Z |
ZXMN6A11Z
ISSUE 1 - DECEMBER 2002
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
60
V
ID=250 A, VGS=0V
VDS=60V, VGS=0V
VGS=
20V, VDS=0V
ID=250 A, VDS= VGS
VGS=10V, ID=4.4A
VGS=4.5V, ID=3.8A
VDS=15V,ID=2.5A
Zero Gate Voltage Drain Current
1.0
A
Gate-Body Leakage
100
nA
Gate-Source Threshold Voltage
1.0
V
Static Drain-Source On-State Resistance
(1)
0.14
0.25
Forward Transconductance (1)(3)
gfs
4.9
S
DYNAMIC
(3)
Input Capacitance
Ciss
Coss
Crss
330
pF
VDS=40 V, VGS=0V,
f=1MHz
Output Capacitance
35
pF
Reverse Transfer Capacitance
17
pF
SWITCHING
(2) (3)
Turn-On Delay Time
td(on)
tr
td(off)
tf
Qg
1.95
ns
VDD=30V, ID=2.5A
RG
6.0 , VGS=10V
Rise Time
3.5
ns
Turn-Off Delay Time
8.2
ns
Fall Time
4.6
ns
Gate Charge
3.0
nC
VDS= 15V, VGS=5V
ID= 2.5A
Total Gate Charge
Qg
Qgs
Qgd
5.7
nC
VDS=15V, VGS=10V,
ID=2.5A
Gate-Source Charge
1.25
nC
Gate-Drain Charge
0.86
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
VSD
0.85
0.95
V
TJ=25°C, IS=2.8A,
VGS=0V
TJ=25°C, IF=2.5A,
di/dt= 100A/
μ
s
Reverse Recovery Time (3)
trr
Qrr
21.5
ns
Reverse Recovery Charge (3)
20.5
nC
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Pulse width
≤
300μs. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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