參數(shù)資料
型號: ZXMP6A18KTC
廠商: ZETEX PLC
元件分類: JFETs
英文描述: 60V P-channel enhancement mode MOSFET
中文描述: 10.4 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: DPAK-3
文件頁數(shù): 2/8頁
文件大?。?/td> 580K
代理商: ZXMP6A18KTC
ZXMP6A18K
Issue 1 - March 2006
Zetex Semiconductors plc 2006
2
www.zetex.com
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in
still air conditions.
(b)For a device surface mounted on FR4 PCB measured at t 10 sec.
(c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300 s - pulse width limited by maximum
junction temperature.
(d)For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
Parameter
Symbol
Limit
Unit
Drain-source voltage
V
DSS
-60
V
Gate-source voltage
V
GS
±20
V
Continuous drain current
I
D
@V
GS
=10V; T
A
=25°C
(b)
-10.4
A
@V
GS
=10V; T
A
=70°C
(b)
-8.3
A
@V
GS
=10V; T
A
=25°C
(a)
-6.8
A
Pulsed drain current
(c)
I
DM
-37.5
A
Continuous source current (body diode)
(b)
I
S
-11.5
A
Pulsed source current (body diode)
(c)
I
SM
-37.5
A
Power dissipation at T
A
=25°C
(a)
Linear derating factor
P
D
4.3
34.4
W
mW/°C
Power dissipation at T
A
=25°C
(b)
Linear derating factor
P
D
10.1
80.8
W
mW/°C
Power dissipation at T
A
=25°C
(d)
Linear derating factor
P
D
2.15
17.2
W
mW/°C
Operating and storage temperature range
T
j
:T
stg
-55 to +150
°C
Thermal resistance
Parameter
Symbol
Value
Unit
Junction to ambient
(a)
R
JA
29
°C/W
Junction to ambient
(b)
R
JA
12.3
°C/W
Junction to ambient
(d)
R
JA
58
°C/W
相關(guān)PDF資料
PDF描述
ZXMP7A17G 70V P-channel enhancement mode MOSFET
ZXMP7A17GTA 70V P-channel enhancement mode MOSFET
ZXMP7A17GTC 70V P-channel enhancement mode MOSFET
ZXMP7A17K 70V P-channel enhancement mode MOSFET
ZXMP7A17KTC 70V P-channel enhancement mode MOSFET
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