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參數(shù)資料
| 型號： | ZXMP6A18KTC |
| 廠商： | ZETEX PLC |
| 元件分類： | JFETs |
| 英文描述： | 60V P-channel enhancement mode MOSFET |
| 中文描述： | 10.4 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 580K |
| 代理商： | ZXMP6A18KTC |
ZXMP6A18K
Issue 1 - March 2006
Zetex Semiconductors plc 2006
4
www.zetex.com
Electrical characteristics (at T
A
= 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max. Unit
Conditions
Static
Drain-source breakdown voltage V
(BR)DSS
Zero gate voltage drain current
Gate-body leakage
Gate-source threshold voltage
Static drain-source on-state
resistance
(*)
-60
V
μA
nA
V
I
D
=-250 A, V
GS
=0V
V
DS
=-60V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
I
D
=-250 A, V
DS
=V
GS
V
GS
=-10V, I
D
=-3.5A
V
GS
=-4.5V, I
D
=-2.9A
V
DS
=-15V,I
D
=-3.5A
I
DSS
I
GSS
V
GS(th)
R
DS(on)
-1.0
100
-1.0
NOTES:
(*) Measured under pulsed conditions. Width
() Switching characteristics are independent of operating junction temperature.
() For design aid only, not subject to production testing.
300μs. Duty cycle
2%.
0.055
0.080
Forward transconductance
(*)()
Dynamic
()
Input capacitance
Output capacitance
Reverse transfer capacitance
gfs
8.7
S
C
iss
C
oss
C
rss
1580
160
140
pF
pF
pF
V
DS
=-30 V, V
GS
=0V,
f=1MHz
Switching
() ()
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate charge
t
d(on)
t
r
t
d(off)
t
f
Q
g
4.6
5.8
55
23
23
ns
ns
ns
ns
nC
V
DD
=-30V, I
D
=-1A
R
G
=6.0W,V
GS
=-10V
V
DS
=-30V,V
GS
=-5V,
I
D
=-3.5A
Total gate charge
Gate-source charge
Gate-drain charge
Q
g
Q
gs
Q
gd
44
3.9
9.8
nC
nC
nC
V
DS
=-30V,V
GS
=-10V,
I
D
=-3.5A
Source-drain diode
Diode forward voltage
(*)
V
SD
-0.85
-0.95
V
T
J
=25°C, I
S
=-4.2A,
V
GS
=0V
Reverse recovery time
()
Reverse recovery charge
()
t
rr
37
ns
T
J
=25°C, I
F
=-2.1A,
di/dt= 100A/μs
Q
rr
56
nC
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