參數(shù)資料
型號： ZXMS6003
廠商： Zetex Semiconductor
英文描述： 60V N-channel self protected enhancement mode IntelliFET MOSFET with programmable current limit
中文描述： 60V的N通道自我保護的可編程電流限制增強型MOSFET的公司IntelliFET
文件頁數(shù)： 6/10頁
文件大?。?/td> 682K
代理商： ZXMS6003
ZXMS6003G
Issue 2 - March 2007
Zetex Semiconductors plc 2007
6
www.zetex.com
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Symbol
Min
Typ
Max
Unit
Conditions
Static Characteristics
Drain-source clamp voltage
V
DS(AZ)
60
70
75
V
I
D
=10mA
Off state drain current
I
DSS
0.1
3
A
V
DS
=12V, V
IN
=0V
Off state drain current
I
DSS
3
15
A
V
DS
=32V, V
IN
=0V
Input threshold voltage
(*)
NOTES:
(*) Protection features may operate outside spec for V
IN
<4.5V
() The drain current is limited to a reduced value when Vds exceeds a safe level.
V
IN(th)
1
2.1
V
V
DS
=V
GS
, I
D
=1mA
Input current
I
IN
0.7
1.2
mA
V
IN
=+5V
Input current
I
IN
1.5
2.7
mA
V
IN
=+7V
Input current
I
IN
4
7
mA
V
IN
=+10V
Static drain-source on-state
resistance
R
DS(on)
520
675
m
V
IN
=5V, I
D
=0.2A
Static drain-source on-state
resistance
R
DS(on)
385
500
m
V
IN
=10V, I
D
=0.5A
Current limit
()
I
D(LIM)
0.2
0.3
0.4
A
V
IN
=5V, Vds=10V
Rprog=20k
Current limit
()
I
D(LIM)
0.7
0.9
1.2
A
V
IN
=10V, Vds=10V,
Rprog=20k
Dynamic characteristics
Turn-on time (V
IN
to 90% I
D
)
t
on
3.0
10
s
Rprog=20k, R
L
=22 ,
V
IN
=0 to 10V,
V
DD
=12V
Turn-off time (V
IN
to 90% I
D
)
t
off
13
20
s
Rprog=20k, R
L
=22 ,
V
IN
=10V to 0V,
V
DD
=12V
Slew rate on (70 to 50% V
DD
) -dV
DS
/dt
on
8
20
V/ s
Rprog=20k, R
L
=22 ,
V
IN
=0 to 10V,
V
DD
=12V
Slew rate off (50 to 70% V
DD
) DV
DS
/dt
on
3.2
10
V/ s
Rprog=20k, R
L
=22 ,
V
IN
=10V to 0V,
V
DD
=12V
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參數(shù)描述
ZXMS6003G 制造商:ZETEX 制造商全稱:ZETEX 功能描述:60V N-channel self protected enhancement mode IntelliFET MOSFET with programmable current limit
ZXMS6003GTA 功能描述:MOSFET 60V IntelliFET Over Current Ctrl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXMS6004DG 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:60V N-channel self protected enhancement mode
ZXMS6004DGTA 功能描述:MOSFET INTELLIFET MOSFET 60V N CHAN RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXMS6004DT8 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET? MOSFET
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