參數(shù)資料
型號: ZXMS6003
廠商: Zetex Semiconductor
英文描述: 60V N-channel self protected enhancement mode IntelliFET MOSFET with programmable current limit
中文描述: 60V的N通道自我保護的可編程電流限制增強型MOSFET的公司IntelliFET
文件頁數(shù): 7/10頁
文件大?。?/td> 682K
代理商: ZXMS6003
ZXMS6003G
Issue 2 - March 2007
Zetex Semiconductors plc 2007
7
www.zetex.com
Electrical characteristics (at T
amb
= 25°C unless otherwise stated) (cont.)
NOTES:
() Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed
for continuous, repetitive operation.
Parameter
Symbol
Min
Typ
Max
Unit
Conditions
Protection functions
()
Required input voltage for
over temperature protection
V
PROT
4.5
V
Thermal overload trip
temperature
T
JT
150
175
°C
Thermal hysteresis
1
°C
Unclamped single pulse
inductive energy
T
j
=25°C
E
AS
550
mJ
I
D(ISO
)=0.7A,
V
DD
=32V
Unclamped single pulse
inductive energy
T
j
=150°C
E
AS
200
mJ
I
D(ISO
)=0.7A,
V
DD
=32V
Status flag
Normal operation
V
STATUS
4.95
V
V
IN
= 5V
Current limit operating
V
STATUS
2.5
V
V
IN
= 5V
Thermal shutdown activated V
STATUS
0.2
1
V
V
IN
= 5V
Normal operation
V
STATUS
8.0
V
V
IN
= 10V
Current limit operation
V
STATUS
3.0
V
V
IN
= 10V
Thermal shutdown activated V
STATUS
0.35
1
V
V
IN
= 10V
Inverse diode
Source drain voltage
V
SD
1
V
V
IN
=0V, -I
D
=1.4A
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