參數(shù)資料
型號: ZXT1M322TA
英文描述: TRANSISTOR | BJT | PNP | 12V V(BR)CEO | 4A I(C) | SMT
中文描述: 晶體管|晶體管|進(jìn)步黨| 12V的五(巴西)總裁| 4A條一(c)|貼片
文件頁數(shù): 4/6頁
文件大?。?/td> 181K
代理商: ZXT1M322TA
ZXT1M322
ISSUE 2 - JUNE 2002
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-20
-35
V
I
C
=-100 A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
-12
-25
V
I
C
=-10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
-7.5
-8.5
V
I
E
=-100 A
Collector Cut-Off Current
I
CBO
-25
nA
V
CB
=-16V
Emitter Cut-Off Current
I
EBO
-25
nA
V
EB
=-6V
Collector Emitter Cut-Off Current
I
CES
-25
nA
V
CES
=-10V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-10
-100
-100
-195
-240
-17
-140
-150
-300
-300
mV
mV
mV
mV
mV
I
C
=-0.1A, I
B
=-10mA*
I
C
=-1A, I
B
=-10mA*
I
C
=-1.5A, I
B
=-50mA*
I
C
=-3A, I
B
=-50mA*
I
C
=-4A, I
B
=-150mA*
Base-Emitter Saturation Voltage
V
BE(sat)
-0.97
-1.05
V
I
C
=-4A, I
B
=-150mA*
Base-Emitter Turn-On Voltage
V
BE(on)
-0.87
-0.95
V
I
C
=-4A, V
CE
=-2V*
Static Forward Current Transfer
Ratio
h
FE
300
300
180
60
45
475
450
275
100
70
I
C
=-10mA, V
CE
=-2V*
I
C
=-0.1A, V
CE
=-2V*
I
C
=-2.5A, V
CE
=-2V*
I
C
=-8A, V
CE
=-2V*
I
C
=-10A, V
CE
=-2V*
Transition Frequency
f
T
100
110
MHz
I
=-50mA, V
CE
=-10V
f=100MHz
Output Capacitance
C
obo
21
30
pF
V
CB
=-10V, f=1MHz
Turn-On Time
t
(on)
70
ns
V
CC
=-6V, I
=-2A
I
B1
=I
B2
=-50mA
Turn-Off Time
t
(off)
130
ns
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated).
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
2%
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