參數(shù)資料
型號(hào): μ PG100B
廠商: NEC Corp.
英文描述: Wide-Band Amplifier(寬帶放大器)
中文描述: 寬帶放大器(寬帶放大器)
文件頁(yè)數(shù): 7/8頁(yè)
文件大小: 86K
代理商: Μ PG100B
7
m
PG100B,
m
PG101B
RECOMMENDED SOLDERING CONDITIONS
The following conditions (see table below) must be met when soldering this product.
Please consult with our sales offices in case other soldering process is used, or in case soldering is done under
different conditions.
TYPES OF SURFACE MOUNT DEVICE
For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL”
(C10535E).
Soldering process
Soldering conditions
Symbol
Infrared ray reflow
Peak package’s surface temperature: 230 °C or below,
Reflow time: 10 seconds or below (210 °C or higher),
Number of reflow process: 1, Exposure limit*: None
Partial heating method
Terminal temperature: 260 °C or below,
Flow time: 10 seconds or below,
Exposure limit*: None
* Exposure limit before soldering after dry-pack package is opened.
Storage conditions: 25 °C and relative humidity at 65 % or less.
Note
Do not apply more than a single process at once, except for “Partial heating method”.
PRECAUTION
This IC must be handled with great care to prevent static discharge because its circuitry is
composed of GaAs MES FET.
Caution
The Great Care must be aken n dealing with he devices n his guide.
The reason s hat he material of he devices s GaAs Gallium Arsenide), which s
designated as harmful substance according o he aw concerned.
Keep he aw concerned and so on, especially n case of removal.
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