參數(shù)資料
型號: μPD434004
廠商: NEC Corp.
英文描述: 4M-Bit CMOS Fast Static RAM(4M位CMOS 快速靜態(tài))
中文描述: 4分位CMOS快速靜態(tài)隨機存儲器(4分位的CMOS快速靜態(tài))
文件頁數(shù): 13/14頁
文件大?。?/td> 98K
代理商: ΜPD434004
13
μ
PD434004
NOTES FOR CMOS DEVICES
1
PRECAUTION AGAINST ESD FOR SEMICONDUCTORS
Note: Strong electric field, when exposed to a MOS device, can cause destruction of
the gate oxide and ultimately degrade the device operation. Steps must be
taken to stop generation of static electricity as much as possible, and quickly
dissipate it once, when it has occurred. Environmental control must be
adequate. When it is dry, humidifier should be used. It is recommended to
avoid using insulators that easily build static electricity. Semiconductor
devices must be stored and transported in an anti-static container, static
shielding bag or conductive material. All test and measurement tools including
work bench and floor should be grounded. The operator should be grounded
using wrist strap. Semiconductor devices must not be touched with bare
hands. Similar precautions need to be taken for PW boards with semiconductor
devices on it.
2
HANDLING OF UNUSED INPUT PINS FOR CMOS
Note: No connection for CMOS device inputs can be cause of malfunction. If no
connection is provided to the input pins, it is possible that an internal input
level may be generated due to noise, etc., hence causing malfunction. CMOS
device behave differently than Bipolar or NMOS devices. Input levels of CMOS
devices must be fixed high or low by using a pull-up or pull-down circuitry. Each
unused pin should be connected to V
DD
or GND with a resistor, if it is considered
to have a possibility of being an output pin. All handling related to the unused
pins must be judged device by device and related specifications governing the
devices.
3
STATUS BEFORE INITIALIZATION OF MOS DEVICES
Note: Power-on does not necessarily define initial status of MOS device. Production
process of MOS does not define the initial operation status of the device.
Immediately after the power source is turned ON, the devices with reset
function have not yet been initialized. Hence, power-on does not guarantee
out-pin levels, I/O settings or contents of registers. Device is not initialized
until the reset signal is received. Reset operation must be executed immedi-
ately after power-on for devices having reset function.
相關PDF資料
PDF描述
μPD434008 4M-Bit CMOS Fast Static RAM(4M位CMOS 快速靜態(tài))
μPD434016AL 4M-Bit CMOS Fast SRAM(4M CMOS 快速靜態(tài)RAM)
μPD434016A 4M-Bit CMOS Fast SRAM(4M CMOS 快速靜態(tài)RAM)
μPD441000L-X 1M-Bit CMOS Static RAM(1M 位CMOS 靜態(tài)RAM)
μPD442000L-X 2M-Bit CMOS Static RAM(2M CMOS SRAM)
相關代理商/技術參數(shù)
參數(shù)描述
PD43-472M 功能描述:固定電感器 4.7uH 20% .109ohm Choke SMT Inductor RoHS:否 制造商:AVX 電感:10 uH 容差:20 % 最大直流電流:1 A 最大直流電阻:0.075 Ohms 工作溫度范圍:- 40 C to + 85 C 自諧振頻率:38 MHz Q 最小值:40 尺寸:4.45 mm W x 6.6 mm L x 2.92 mm H 屏蔽:Shielded 端接類型:SMD/SMT 封裝 / 箱體:6.6 mm x 4.45 mm
PD43-473K 功能描述:固定電感器 47uH 10% .844ohm Choke SMT Inductor RoHS:否 制造商:AVX 電感:10 uH 容差:20 % 最大直流電流:1 A 最大直流電阻:0.075 Ohms 工作溫度范圍:- 40 C to + 85 C 自諧振頻率:38 MHz Q 最小值:40 尺寸:4.45 mm W x 6.6 mm L x 2.92 mm H 屏蔽:Shielded 端接類型:SMD/SMT 封裝 / 箱體:6.6 mm x 4.45 mm
PD435 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC
PD43-562M 功能描述:固定電感器 5.6uH 20% .126ohm Choke SMT Inductor RoHS:否 制造商:AVX 電感:10 uH 容差:20 % 最大直流電流:1 A 最大直流電阻:0.075 Ohms 工作溫度范圍:- 40 C to + 85 C 自諧振頻率:38 MHz Q 最小值:40 尺寸:4.45 mm W x 6.6 mm L x 2.92 mm H 屏蔽:Shielded 端接類型:SMD/SMT 封裝 / 箱體:6.6 mm x 4.45 mm
PD43-563K 功能描述:固定電感器 56uH 10% .937ohm Choke SMT Inductor RoHS:否 制造商:AVX 電感:10 uH 容差:20 % 最大直流電流:1 A 最大直流電阻:0.075 Ohms 工作溫度范圍:- 40 C to + 85 C 自諧振頻率:38 MHz Q 最小值:40 尺寸:4.45 mm W x 6.6 mm L x 2.92 mm H 屏蔽:Shielded 端接類型:SMD/SMT 封裝 / 箱體:6.6 mm x 4.45 mm