- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382783 > μPD434004 (NEC Corp.) 4M-Bit CMOS Fast Static RAM(4M位CMOS 快速靜態(tài)) PDF資料下載
參數(shù)資料
| 型號： | μPD434004 |
| 廠商： | NEC Corp. |
| 英文描述： | 4M-Bit CMOS Fast Static RAM(4M位CMOS 快速靜態(tài)) |
| 中文描述： | 4分位CMOS快速靜態(tài)隨機(jī)存儲器（4分位的CMOS快速靜態(tài)） |
| 文件頁數(shù)： | 7/14頁 |
| 文件大?。?/td> | 98K |
| 代理商： | ΜPD434004 |
7
μ
PD434004
Write Cycle
μ
PD434004LE-20
μ
PD434004LE-25
Parameter
Symbol
Unit
Condition
MIN.
MAX .
MIN.
MAX .
Write cycle time
t
WC
20
25
ns
CS to end of write
t
CW
14
17
ns
Address valid to end of write
t
AW
14
17
ns
Write pulse width
t
WP
12
15
ns
Data valid to end of write
t
DW
10
12
ns
Data hold time
t
DH
0
0
ns
Address setup time
t
AS
0
0
ns
Write recovery time
t
WR
3
3
ns
WE to output in high impedance
t
WHZ
8
10
ns
Note
Output active from end of write
t
OW
0
0
ns
Note
See the output load shown in
Fig. 2
.
Write Cycle Timing Chart 1 (WE Controlled)
#
t
WC
t
AS
t
WP
t
AW
t
WR
Data in
Address (Input)
CS (Input)
WE (Input)
I/O
(Input/Output)
t
CW
t
WHZ
t
DW
t
DH
t
OW
Indefinite data out
Indefinite
data out
High im-
pedance
High im-
pedance
Caution CS or WE should be fixed to high level during address transition.
Remark 1.
Write operation is done during the overlap time of a low level CS and a low level WE.
2.
When WE is at low level, I/O pins are always high impedance. When WE is at high level, read
operation is executed. Therefore OE should be at high level to make I/O pins high impedance.
3.
t
WR
is measured between rising edge of CS or WE, whichever occurs first, and end of t
WC
.
4.
t
WHZ
is measured at V
OL
+ 200 mV and V
OH
– 200 mV with the output load shown in
Fig.2
.
5.
t
OW
is measured at
±
200 mV from steady-state voltage with the output load shown in
Fig.2
.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| μPD434008 | 4M-Bit CMOS Fast Static RAM(4M位CMOS 快速靜態(tài)) |
| μPD434016AL | 4M-Bit CMOS Fast SRAM(4M CMOS 快速靜態(tài)RAM) |
| μPD434016A | 4M-Bit CMOS Fast SRAM(4M CMOS 快速靜態(tài)RAM) |
| μPD441000L-X | 1M-Bit CMOS Static RAM(1M 位CMOS 靜態(tài)RAM) |
| μPD442000L-X | 2M-Bit CMOS Static RAM(2M CMOS SRAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PD43-472M | 功能描述:固定電感器 4.7uH 20% .109ohm Choke SMT Inductor RoHS:否 制造商:AVX 電感:10 uH 容差:20 % 最大直流電流:1 A 最大直流電阻:0.075 Ohms 工作溫度范圍:- 40 C to + 85 C 自諧振頻率:38 MHz Q 最小值:40 尺寸:4.45 mm W x 6.6 mm L x 2.92 mm H 屏蔽:Shielded 端接類型:SMD/SMT 封裝 / 箱體:6.6 mm x 4.45 mm |
| PD43-473K | 功能描述:固定電感器 47uH 10% .844ohm Choke SMT Inductor RoHS:否 制造商:AVX 電感:10 uH 容差:20 % 最大直流電流:1 A 最大直流電阻:0.075 Ohms 工作溫度范圍:- 40 C to + 85 C 自諧振頻率:38 MHz Q 最小值:40 尺寸:4.45 mm W x 6.6 mm L x 2.92 mm H 屏蔽:Shielded 端接類型:SMD/SMT 封裝 / 箱體:6.6 mm x 4.45 mm |
| PD435 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC |
| PD43-562M | 功能描述:固定電感器 5.6uH 20% .126ohm Choke SMT Inductor RoHS:否 制造商:AVX 電感:10 uH 容差:20 % 最大直流電流:1 A 最大直流電阻:0.075 Ohms 工作溫度范圍:- 40 C to + 85 C 自諧振頻率:38 MHz Q 最小值:40 尺寸:4.45 mm W x 6.6 mm L x 2.92 mm H 屏蔽:Shielded 端接類型:SMD/SMT 封裝 / 箱體:6.6 mm x 4.45 mm |
| PD43-563K | 功能描述:固定電感器 56uH 10% .937ohm Choke SMT Inductor RoHS:否 制造商:AVX 電感:10 uH 容差:20 % 最大直流電流:1 A 最大直流電阻:0.075 Ohms 工作溫度范圍:- 40 C to + 85 C 自諧振頻率:38 MHz Q 最小值:40 尺寸:4.45 mm W x 6.6 mm L x 2.92 mm H 屏蔽:Shielded 端接類型:SMD/SMT 封裝 / 箱體:6.6 mm x 4.45 mm |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。