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| 型號： | 06F7752 |
| 英文描述： | TRANSISTOR MIT DRAIN STROM MESSAUSGANG |
| 中文描述： | 晶體管漏極斯特羅姆MESSAUSGANG麻省理工學(xué)院 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 132K |
| 代理商： | 06F7752 |
C-13
IRCZ44
PD - 9.529B
l Dynamic dv/dt Rating
l Current Sense
l 175°C Operating Temperature
l Fast Switching
l Ease of Paralleling
l Simple Drive Requirements
HEXFET Power MOSFET
VDSS = 60V
RDS(on) = 0.028
ID = 50*A
Description
Absolute Maximum Ratings
Third Generation HEXFETs from International Rectifier provide the designer with
the best combination of fast switching, ruggedized device, low on-resistance and
cost-effectiveness.
The HEXSence device provides an accurate fraction of the drain current through
the additional two leads to be used for control or protection of the device. These
devices exhibit similar electrical and thermal characteristics as their IRF-series
equivalent part numbers. The provision of a kelvin source connection effectively
eliminates problems of common source inductance when the HEXSence is
used as a fast, high-current switch in non current-sensing applications.
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
50*
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
37
IDM
Pulsed Drain Current
210
PD @TC = 25°C
Power Dissipation
150
W
Linear Derating Factor
1.0
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
30
mJ
dv/dt
Peak Diode Recovery dv/dt
4.5
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw
10 lbfin (1.1 Nm)
A
°C
Parameter
Min.
Typ.
Max.
Units
RθJC
Junction-to-Case
—
1.0
RθCS
Case-to-Sink, Flat, Greased Surface
—
0.50
—
RθJA
Junction-to-Ambient
—
62
Thermal Resistance
°C/W
TO-220 HexSense
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