參數(shù)資料
型號(hào): 06F7752
英文描述: TRANSISTOR MIT DRAIN STROM MESSAUSGANG
中文描述: 晶體管漏極斯特羅姆MESSAUSGANG麻省理工學(xué)院
文件頁(yè)數(shù): 6/6頁(yè)
文件大小: 132K
代理商: 06F7752
C-18
IRCZ44
Fig. 18 HEXSense Ratio Test Circuit
Fig. 19 HEXSense Sensing Cell Output
Capacitance Test Circuit
Mechanical drawings, Appendix A
Part marking information, Appendix B
Test Circuit diagrams, Appendix C
Sense
Ratio
(r)
I
D, Drain Current (Amps)
Fig. 16 Typical HEXSense Ratio vs.
Drain Current
Sense
Ratio
(r)
Sense
Ratio
(r)
T
J, Junction Temperature (°C)
V
GS, Gate-to-Source Voltage (Volts)
Fig. 15 Typical HEXSense Ratio vs.
JunctionTemperature
Fig. 17 Typical HEXSense Ratio vs.
Gate Voltage
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