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參數(shù)資料
| 型號(hào)： | 06F7752 |
| 英文描述： | TRANSISTOR MIT DRAIN STROM MESSAUSGANG |
| 中文描述： | 晶體管漏極斯特羅姆MESSAUSGANG麻省理工學(xué)院 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 132K |
| 代理商： | 06F7752 |
C-14
IRCZ44
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
60
–––
V
VGS = 0V, ID = 250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
––– 0.060 –––
V/°C
Reference to 25°C, ID = 1mA
RDS(ON)
Static Drain-to-Source On-Resistance
–––
––– 0.028
VGS = 10V, ID = 31A
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250A
gfs
Forward Transconductance
18
–––
S
VDS = 25V, ID = 31A
–––
25
VDS = 60V, VGS = 0V
–––
250
VDS = 48V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
100
VGS = 20V
Gate-to-Source Reverse Leakage
–––
-100
VGS = -20V
Qg
Total Gate Charge
–––
95
ID = 52A
Qgs
Gate-to-Source Charge
–––
27
nC
VDS = 48V
Qgd
Gate-to-Drain ("Miller") Charge
–––
46
VGS = 10V, See Fig. 6 and 13
td(on)
Turn-On Delay Time
–––
19
–––
VDD = 30V
tr
Rise Time
–––
120
–––
ID = 52A
td(off)
Turn-Off Delay Time
–––
55
–––
RG = 9.1
tf
Fall Time
–––
86
–––
RD = 0.54, See Fig. 10
L
D
Internal Drain Inductance
–––
4.5
–––
L
C
Internal Source Inductance
–––
7.5
–––
Ciss
Input Capacitance
––– 2500 –––
VGS = 0V
Coss
Output Capacitance
––– 1200 –––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
200
–––
= 1.0MHz, See Fig. 5
r
Current Sensing Ratio
2460 ––– 2720
–––
ID = 52A, VGS = 10V
Coss
Output Capacitance of Sensing Cells
–––
9.0
–––
pF
VGS = 0V, VDS = 25V, = 1.0MHz
nH
Between lead,
6 mm (0.25in.)
from package
and center of
die contact
Drain-to-Source Leakage Current
IDSS
IGSS
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
VSD
Diode Forward Voltage
–––
2.5
V
TJ = 25°C, IS = 52A, VGS = 0V
trr
Reverse Recovery Time
–––
140
300
ns
TJ = 25°C, IF = 52A
Qrr
Reverse Recovery Charge
–––
1.2
2.8
nC
di/dt = 100A/s
ton
Forward Turn-On Time
Source-Drain Ratings and Characteristics
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
210
–––
50*
A
S
D
G
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD = 25V, starting TJ = 25°C, L = 0.013mH
RG = 25, IAS = 52A. (See Figure 12)
I
SD ≤ 52A, di/dt ≤ 250A/s, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 300s; duty cycle ≤ 2%.
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
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