參數(shù)資料
型號: 150GAL12DN2
英文描述: IGBT Module
中文描述: IGBT模塊
文件頁數(shù): 1/5頁
文件大小: 77K
代理商: 150GAL12DN2
1
Nov-24-1997
BSM 150 GAL 120 DN2
IGBT Power Module
Single switch with chopper diode at collector
Including fast free-wheeling diodes
Package with insulated metal base plate
Type
VCE
IC
Package
Ordering Code
BSM 150 GAL 120 DN2
1200V 210A
HALF BRIDGE GAL 2 C67076-A2013-A70
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCE
1200
V
Collector-gate voltage
RGE = 20 k
VCGR
1200
Gate-emitter voltage
VGE
± 20
DC collector current
TC = 25 °C
TC = 80 °C
IC
150
210
A
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 80 °C
ICpuls
300
420
Power dissipation per IGBT
TC = 25 °C
Ptot
1250
W
Chip temperature
Tj
+ 150
°C
Storage temperature
Tstg
-40 ... + 125
Thermal resistance, chip case
RthJC
≤ 0.1
K/W
Diode thermal resistance, chip case
RthJCD
≤ 0.25
Diode thermal resistance, chip-case,chopper
RTHJCDC
≤ 0.18
Insulation test voltage, t = 1min.
Vis
2500
Vac
Creepage distance
-
20
mm
Clearance
-
11
DIN humidity category, DIN 40 040
-
F
sec
IEC climatic category, DIN IEC 68-1
-
40 / 125 / 56
相關(guān)PDF資料
PDF描述
150GT120DN2 Ultra-Low-Power Voltage Detectors and µP Supervisory Circuits
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