- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄298184 > 1N6483-E3 (VISHAY SEMICONDUCTORS) 1 A, 800 V, SILICON, SIGNAL DIODE, DO-213AB PDF資料下載
參數(shù)資料
| 型號： | 1N6483-E3 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 1 A, 800 V, SILICON, SIGNAL DIODE, DO-213AB |
| 封裝： | LEAD FREE, PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 103K |
| 代理商： | 1N6483-E3 |
1N6478 thru 1N6484
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88527
Revision: 14-Apr-08
2
Notes:
(1) Thermal resistance from junction to ambient, 0.24 x 0.24" (6.0 x 6.0 mm) copper pads to each terminal
(2) Thermal resistance from junction to terminal, 0.24 x 0.24" (6.0 x 6.0 mm) copper pads to each terminal
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
1N6478
1N6479
1N6480
1N6481
1N6482
1N6483
1N6484
UNIT
Maximum
instantaneous
forward voltage
1.0 A
TA = 25 °C
TA = 75 °C
VF
1.1
1.0
V
Maximum DC reverse
current at rated DC
blocking voltage
TA = 25 °C
TA = 125 °C
IR
10
200
A
Typical junction
capacitance
4.0 V, 1 MHz
CJ
8.0
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
1N6478
1N6479
1N6480
1N6481
1N6482
1N6483
1N6484
UNIT
Maximum thermal resistance (1)(2)
RθJA
RθJT
50
20
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
REFERRED PACKAGE
BASE QUANTITY
DELIVERY MODE
1N6482-E3/96
0.114
96
1500
7" diameter plastic tape and reel
1N6482-E3/97
0.114
97
5000
13" diameter plastic tape and reel
1N6482HE3/96 (1)
0.114
96
1500
7" diameter plastic tape and reel
1N6482HE3/97 (1)
0.114
97
5000
13" diameter plastic tape and reel
Figure 1. Forward Current Derating Curve
0
0.2
0.4
0.6
0.8
050
75
25
100
125
150
175
1.0
A
v
erage
For
w
ard
C
u
rrent
(A)
60 Hz
Resistive or
Inductive Load
Terminal Temperature (°C)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
1
10
100
0
5.0
10
15
20
25
30
T
A = 75 °C
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
P
eak
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 1N6492-DC-JQRS.XRAY | 1.2 A, 45 V, SILICON, RECTIFIER DIODE, TO-205AF |
| 1N6640D2B-JQRS.GCDM | 0.3 A, SILICON, SIGNAL DIODE |
| 1N6640D2B-JQRS.RAD | 0.3 A, SILICON, SIGNAL DIODE |
| 1N6677-1 | 0.2 A, SILICON, SIGNAL DIODE, DO-35 |
| 1N750A/D7 | 4.7 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N6483-E3/1 | 功能描述:整流器 800 Volt 1.0 Amp 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N6483-E3/26 | 制造商:Vishay Angstrohm 功能描述:Diode Switching 800V 1A 2-Pin DO-213AB T/R |
| 1N6483-E3/51 | 功能描述:整流器 1.0 Amp 800 Volt RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N6483-E3/75 | 功能描述:整流器 1.0 Amp 800 Volt RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N6483-E3/76 | 功能描述:整流器 1.0 Amp 800 Volt RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。