- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄298184 > 1N6483-E3 (VISHAY SEMICONDUCTORS) 1 A, 800 V, SILICON, SIGNAL DIODE, DO-213AB PDF資料下載
參數(shù)資料
| 型號(hào)： | 1N6483-E3 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 1 A, 800 V, SILICON, SIGNAL DIODE, DO-213AB |
| 封裝： | LEAD FREE, PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 103K |
| 代理商： | 1N6483-E3 |
1N6478 thru 1N6484
Vishay General Semiconductor
Document Number: 88527
Revision: 14-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Characteristics
Instantaneo
u
s
For
w
ard
C
u
rrent
(A)
10
1
0.1
0.01
Instantaneous Forward Voltage (V)
0.4
1.2
0.8
0.6
1.4
1.6
1.0
T
J = 25 °C
Pulse Width = 300 s
1 % Duty Cycle
Instantaneo
u
s
Re
v
erse
C
u
rrent
(mA)
1
10
0.01
0.1
20
0
100
40
60
80
Percent of Rated Peak Reverse Voltage (%)
T
J = 100 °C
T
J = 25 °C
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance
J
u
nction
Capacitance
(pF)
1
100
10
1
100
Reverse Voltage (V)
10
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
0.01
10
1
100
10
100
0.1
1
Mounted on 0.20 x 0.27" (5 x 7 mm)
Copper Pad Areas
T
ransient
Ther
mal
Impedance
(°C/
W
)
t - Pulse Duration (s)
DO-213AB
1st band denotes type and positive end (cathode)
1st Band
Solderable Ends
D2 = D1
+ 0
- 0.008 (0.20)
D2
0.105 (2.67)
0.095 (2.41)
D1 =
0.022 (0.56)
0.018 (0.46)
0.022 (0.56)
0.018 (0.46)
0.205 (5.2)
0.185 (4.7)
Mounting Pad Layout
0.138 (3.5) MAX.
0.049 (1.25) MIN.
0.238 (6.0) REF.
0.118 (3.0) MIN.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 1N6492-DC-JQRS.XRAY | 1.2 A, 45 V, SILICON, RECTIFIER DIODE, TO-205AF |
| 1N6640D2B-JQRS.GCDM | 0.3 A, SILICON, SIGNAL DIODE |
| 1N6640D2B-JQRS.RAD | 0.3 A, SILICON, SIGNAL DIODE |
| 1N6677-1 | 0.2 A, SILICON, SIGNAL DIODE, DO-35 |
| 1N750A/D7 | 4.7 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N6483-E3/1 | 功能描述:整流器 800 Volt 1.0 Amp 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N6483-E3/26 | 制造商:Vishay Angstrohm 功能描述:Diode Switching 800V 1A 2-Pin DO-213AB T/R |
| 1N6483-E3/51 | 功能描述:整流器 1.0 Amp 800 Volt RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N6483-E3/75 | 功能描述:整流器 1.0 Amp 800 Volt RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N6483-E3/76 | 功能描述:整流器 1.0 Amp 800 Volt RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。