參數(shù)資料
型號: 2064VE
廠商: Lattice Semiconductor Corporation
英文描述: 3.3V In-System Programmable High Density SuperFAST⑩ PLD
中文描述: 3.3在系統(tǒng)可編程高密度PLD的超快⑩
文件頁數(shù): 4/15頁
文件大?。?/td> 200K
代理商: 2064VE
4
Specifications
ispLSI 2064VE
Switching Test Conditions
+ 3.3V
R1
R2
CL
*
Device
Output
Test
Point
*
CL includes Test Fixture and Probe Capacitance.
0213A/2064V
Figure 2. Test Load
DC Electrical Characteristics
Over Recommended Operating Conditions
V
OL
V
OH
I
IL
SYMBOL
1. One output at a time for a maximum duration of one second. V = 0.5V was selected to avoid test
problems by tester ground degradation. Characterized but not 100% tested.
2. Measured using four 16-bit counters.
3. Typical values are at V = 3.3V and T = 25
°
C.
4. Maximum I varies widely with specific device configuration and operating frequency. Refer to the Power Consumption
section of this data sheet and Thermal Management section of the Lattice Semiconductor Data Book or CD-ROM to
estimate maximum I .
Table 2-0007/2064VE
1
I
IH
I
IL-isp
I
IL-PU
I
OS
PARAMETER
2, 4
I
CC
Output Low Voltage
Output High Voltage
Input or I/O Low Leakage Current
Input or I/O High Leakage Current
BSCAN Input Low Leakage Current
I/O Active Pull-Up Current
Output Short Circuit Current
Operating Power Supply Current
I = 8 mA
I = -4 mA
0V
V
V (Max.)
IN
(V
0.2)V
V
V
V
V
5.25V
0V
V
V
0V
V
V
V = 3.3V, V = 0.5V
V = 0.0V, V = 3.0V
f = 1 MHz
IN
IL
IN
IL
CONDITION
MIN.
2.4
TYP.
MAX.
0.4
-10
UNITS
V
V
μ
A
3
90
10
10
-150
-150
-100
μ
A
μ
A
μ
A
μ
A
mA
mA
CC
Input Pulse Levels
Table 2-0003/2064VE
Input Rise and Fall Time
Input Timing Reference Levels
Output Timing Reference Levels
Output Load
GND to 3.0V
1.5V
1.5V
See Figure 2
3-state levels are measured 0.5V from
steady-state active level.
1.5 ns 10% to 90%
TEST CONDITION
R1
316
316
R2
348
348
348
CL
35pF
35pF
35pF
A
B
Active High
Active Low
Active High to Z
at
V
OH
C
316
348
5pF
348
5pF
Active Low to Z
at
V
OL
Table 2-0004/2064V
Output Load Conditions (see Figure 2)
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