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參數(shù)資料
| 型號： | 27LV64-30SO |
| 廠商： | Microchip Technology Inc. |
| 英文描述： | 64K (8K x 8) Low-Voltage CMOS EPROM |
| 中文描述： | 64K的（8K的× 8）低電壓的CMOS存儲器 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 62K |
| 代理商： | 27LV64-30SO |
1996 Microchip Technology Inc.
DS11024E-page 3
27LV64
TABLE 1-3:
READ OPERATION AC CHARACTERISTICS
FIGURE 1-1:
READ WAVEFORMS
AC Testing Waveform:
Output Load:
Input Rise and Fall Times:
Ambient Temperature:
V
1 TTL Load + 100 pF
10 ns
Commercial:
Industrial:
IH
= 2.4V and V
IL
= 0.45V; V
OH
= 2.0V V
OL
= 0.8V
Tamb = 0C to +70C
Tamb = -40C to +85C
Parameter
Sym
27LV64-20
27LV64-25
27LV64-30
Units
Conditions
Min.
Max.
Min.
Max.
Min.
Max.
Address to Output Delay
t
ACC
—
200
—
250
—
300
ns
CE = OE = V
IL
CE to Output Delay
t
CE
—
200
—
250
—
300
ns
OE = V
IL
OE to Output Delay
t
OE
—
100
—
125
—
125
ns
CE = V
IL
CE or OE to O/P High
Impedance
t
OFF
0
50
0
50
0
50
ns
Output Hold from Address CE or
OE, whichever goes first
t
OH
0
—
0
—
0
—
ns
Address
CE
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
OE
Outputs
O0 - O7
V
OH
V
OL
Address Valid
t
CE(2)
t
OE(2)
High Z
Valid Output
t
ACC
(1) t
OFF
is specified for OE or CE, whichever occurs first
(2) OE may be delayed up to t
CE
- t
OE
after the falling edge of CE without impact on t
CE
(3) This parameter is sampled and is not 100% tested.
High Z
t
OH
t
OFF(1,3)
Notes:
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