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參數(shù)資料
| 型號： | 27LV64-30SO |
| 廠商： | Microchip Technology Inc. |
| 英文描述： | 64K (8K x 8) Low-Voltage CMOS EPROM |
| 中文描述： | 64K的（8K的× 8）低電壓的CMOS存儲器 |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 62K |
| 代理商： | 27LV64-30SO |
27LV64
DS11024E-page 4
1996 Microchip Technology Inc.
TABLE 1-4:
PROGRAMMING DC CHARACTERISTICS
TABLE 1-5:
PROGRAMMING AC CHARACTERISTICS
Ambient Temperature: Tamb = 25
V
CC
= 6.5V
±
0.25V, V
°
C
±
5
°
C
0.25V
PP
= V
H
= 13.0V
±
Parameter
Status
Symbol
Min.
Max.
Units
Conditions
Input Voltages
Logic”1”
Logic”0”
V
V
IH
IL
2.0
-0.1
V
CC
0.8
+1
V
V
Input Leakage
—
I
LI
-10
10
μ
A
V
IN
= 0V to V
CC
Output Voltages
Logic”1”
Logic”0”
V
V
OH
OL
2.4
0.45
V
V
I
I
OH
OL
= -400
= 2.1 mA
μ
A
V
CC
Current, program & verify
—
I
CC
2
—
20
mA
Note 1
V
PP
Current, program
—
I
PP
2
—
25
mA
Note 1
A9 Product Identification
—
V
H
11.5
12.5
V
Note 1: V
CC
must be applied simultaneously or before V
PP
and removed simultaneously or after V
PP
.
for Program, Program Verify
and Program Inhibit Modes
AC Testing Waveform:
Ambient Temperature:
V
CC
= 6.5V
V
Tamb=25
= V
H
IH
=2.4V and V
°
= 13.0V
IL
°
0.25V
=0.45V; V
C
OH
=2.0V; V
OL
=0.8V
C
±
5
±
0.25V, V
PP
±
Parameter
Symbol
Min.
Max.
Units
Remarks
Address Set-Up Time
t
AS
2
—
μ
s
Data Set-Up Time
t
DS
2
—
μ
s
Data Hold Time
t
DH
2
—
μ
s
Address Hold Time
t
AH
0
—
μ
s
Float Delay (2)
t
DF
0
130
ns
V
CC
Set-Up Time
t
VCS
2
—
μ
s
Program Pulse Width (1)
t
PW
95
105
μ
s
100
μ
s typical
CE Set-Up Time
t
CES
2
—
μ
s
OE Set-Up Time
t
OES
2
—
μ
s
V
PP
Set-Up Time
t
VPS
2
—
μ
s
Data Valid from OE
t
OE
100
ns
Note 1: For express algorithm, initial programming width tolerance is 100
μ
s
±
5%.
Note 2: This parameter is only sampled and not 100% tested. Output float is defined as the point where data is no
longer driven (see timing diagram).
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