- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371434 > 28F008B3 (Intel Corp.) SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE PDF資料下載
參數(shù)資料
| 型號(hào)： | 28F008B3 |
| 廠商： | Intel Corp. |
| 英文描述： | SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
| 中文描述： | 智能3高級(jí)啟動(dòng)塊字節(jié)寬 |
| 文件頁(yè)數(shù)： | 28/49頁(yè) |
| 文件大?。?/td> | 408K |
| 代理商： | 28F008B3 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)當(dāng)前第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)
SMART 3 ADVANCED BOOT BLOCK
–BYTE-WIDE
E
28
PRELIMINARY
After any program or block erase operation is
complete (even after V
PP
transitions down to
V
PPLK
), the CUI must be reset to read array mode
via the Read Array command if access to the flash
memory array is desired.
Refer to AP-617 Additional Flash Data Protection
Using V
PP
, RP#, and WP#for a circuit-level
description of how to implement the protection
schemes discussed in Section 3.5.
3.7
Power Supply Decoupling
Flash memory’s power switching characteristics
require
careful
device
designers should consider three supply current
issues:
1.
Standby current levels (I
CCS
)
2.
Active current levels (I
CCR
)
3.
Transient peaks produced by falling and rising
edges of CE#.
decoupling.
System
Transient current magnitudes depend on the device
outputs’ capacitive and inductive loading. Two-line
control and proper decoupling capacitor selection
will suppress these transient voltage peaks. Each
flash device should have a 0.1 μF ceramic
capacitor connected between each V
CC
and GND,
and between its V
PP
and GND. These high-
frequency, inherently low-inductance capacitors
should be placed as close as possible to the
package leads.
3.7.1
V
TRACE ON PRINTED CIRCUIT
BOARDS
Designing for in-system writes to the flash memory
requires special consideration of the V
PP
power
supply trace by the printed circuit board designer.
The V
PP
pin supplies the flash memory cells current
for programming and erasing. V
PP
trace widths and
layout should be similar to that of V
CC
. Adequate
V
PP
supply traces, and decoupling capacitors
placed adjacent to the component, will decrease
spikes and overshoots.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 28F008C3 | 3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| 28F008SA | 8-MBIT (1-MBIT x 8) FlashFileTM MEMORY |
| 28F008SA-L | 8-MBIT (1 MBIT x 8) FLASHFILETM MEMORY |
| 28F008S3 | 3 V FlashFile Memory(3V閃速存儲(chǔ)器) |
| 28F016S3 | 3 V FlashFile Memory(3V閃速存儲(chǔ)器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F008BE-T/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:8-MBIT (512K X 16. 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| 28F008BV-T/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Boot Flash |
| 28F008C3 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| 28F008S3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Byte-Wide Smart 3 Flashfile Memory Family 4 8 and |
| 28F008S5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4. 8. AND 16 MBIT |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。