參數(shù)資料
型號(hào)： 28F016B3
廠商： Intel Corp.
英文描述： SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
中文描述： 智能高級(jí)啟動(dòng)3座4 - ，8 - ，16 - ，32 - Mbit閃存家庭
文件頁(yè)數(shù)： 5/48頁(yè)
文件大?。?/td> 304K
代理商： 28F016B3
E
1.0
SMART 3 ADVANCED BOOT BLOCK
5
PRELIMINARY
INTRODUCTION
This datasheet contains the specifications for the
Advanced Boot Block flash memory family, which is
optimized for low power, portable systems. This
family of products features 1.65 V
–2.5 V or 2.7 V–
3.6 V I/Os and a low V
CC
/V
PP
operating range of
2.7 V–3.6 V
for
read,
operations. In addition this family is capable of fast
programming at 12 V. Throughout this document,
the term “2.7 V” refers to the full voltage range
2.7 V–3.6 V (except where noted otherwise) and
“V
PP
= 12 V” refers to 12 V ±5%. Section 1.0 and
2.0 provide an overview of the flash memory family
including applications, pinouts and pin descriptions.
Section 3.0 describes the memory organization and
operation for these products. Sections 4.0 and 5.0
contain
the
operating
Sections 6.0 and 7.0 provide ordering and other
reference information.
program,
and
erase
specifications.
Finally,
1.1
Smart 3 Advanced Boot Block
Flash Memory Enhancements
The Smart 3 Advanced Boot Block flash memory
features
Enhanced blocking for easy segmentation of
code and data or additional design flexibility
Program Suspend to Read command
V
CCQ
input of 1.65 V–2.5 V on all I/Os. See
Figures 1 through 4 for pinout diagrams and
V
CCQ
location
Maximum program and erase time specification
for improved data storage.
Table 1. Smart 3 Advanced Boot Block Feature Summary
Feature
28F008B3, 28F016B3,
28F032B3
(1)
28F400B3
(2),
28F800B3,
28F160B3, 28F320B3
Reference
V
CC
Read Voltage
2.7 V– 3.6 V
Section 4.2, 4.4
V
CCQ
I/O Voltage
1.65 V–2.5 V or 2.7 V– 3.6 V
Section 4.2, 4.4
V
PP
Program/Erase Voltage
2.7 V– 3.6 V or 11.4 V– 12.6 V
Section 4.2, 4.4
Bus Width
8-bit
16 bit
Table 3
Speed
80 ns, 90 ns, 100 ns, 110 ns
Section 4.5
Memory Arrangement
1024 Kbit x 8 (8 Mbit),
2048 Kbit x 8 (16 Mbit),
4096 Kbit x 8 (32 Mbit)
256 Kbit x 16 (4 Mbit),
512 Kbit x 16 (8 Mbit),
1024 Kbit x 16 (16 Mbit)
2048 Kbit x 16 (32 Mbit)
Section 2.2
Blocking (top or bottom)
Eight 8-Kbyte parameter blocks
and
Seven 64-Kbyte blocks (4-Mbit) or
Fifteen 64-Kbyte blocks (8-Mbit) or
Thirty-one 64-Kbyte main blocks (16-Mbit)
Sixty-three 64-Kbyte main blocks (32-Mbit)
Section 2.2
Appendix D
Locking
WP# locks/unlocks parameter blocks
All other blocks protected using V
PP
Section 3.3
Table 8
Operating Temperature
Extended: –40
°
C to +85
°
C
Section 4.2, 4.4
Program/Erase Cycling
100,000 cycles
Section 4.2, 4.4
Packages
40-lead TSOP
(1)
, 48-Ball
μ
BGA* CSP
(2)
48-Lead TSOP, 48-Ball
μ
BGA CSP
(2)
Figure 3, Figure 4
NOTES:
1.
2.
4-Mbit and 32-Mbit density not available in 40-lead TSOP.
4-Mbit density not available in
μ
BGA* CSP.
相關(guān)PDF資料
PDF描述
28F032B3 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
28F160B3 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
28F800B3 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
28F016SA16-MBIT Evaluation Kit/Evaluation System for the MAX5954L/MAX5954A
28F016SV 16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F016C3 制造商:未知廠家 制造商全稱:未知廠家 功能描述:3 VOLT ADVANCED+ BOOT BLOCK. 8-. 16-. 32-MBIT FLASH MEMORY FAMILY
28F016S3 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4. 8. AND 16 MBIT
28F016S5 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4. 8. AND 16 MBIT
28F016SA 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY
28F016SA/DD28F032SA 制造商:未知廠家 制造商全稱:未知廠家 功能描述:INFORMATION
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