參數(shù)資料
型號(hào): 28F016S3
廠商: Intel Corp.
英文描述: 3 V FlashFile Memory(3V閃速存儲(chǔ)器)
中文描述: 3伏FlashFile內(nèi)存(3V的閃速存儲(chǔ)器)
文件頁數(shù): 17/18頁
文件大小: 133K
代理商: 28F016S3
28F004S3/28F008S3/28F016S3 SPECIFICATION UPDATE
297799-009
February, 1999
13 of 14
STATUS:
This erratum has been fixed. Refer to the Summary Tables of Changesto
determine the affected stepping(s).
AFFECTED PRODUCTS:
Refer to the Summary Tables of Changesto determine the
affected products and stepping(s).
6.
Active Read Current
PROBLEM:
I
CCR
deviates from the published specification. Please replace the existing
datasheet specification with the following information:
2.7 V V
CC
Typ
3.3 V V
CC
Typ
Test
Sym
Parameter
Notes
Max
Max
Unit
Conditions
I
CCR
V
CC
Read
Current
1,2,3
15
15
mA
CMOS Inputs
V
CC
= V
CC
Max, CE# = GND
f = 5 MHz, I
OUT
= 0 mA
NOTES:
1. All currents are in RMS unless otherwise noted. These currents are valid for all product versions
(packages and speeds).
2. Automatic Power Savings (APS) reduces typical I
CCR
to 3 mA in static operation.
3. CMOS inputs are either V
CC
±
0.2V or GND
±
0.2V. TTL inputs are either V
IL
or V
IH
.
IMPLICATION:
The increased current requirements may have an impact on power
supply loading or battery life.
WORKAROUND:
None.
STATUS:
Plans to fix this erratum are under evaluation Refer to the Summary Tables of
Changes to determine the affected stepping(s).
AFFECTED PRODUCTS:
Refer to the Summary Tables of Changesto determine the
affected products and stepping(s).
SPECIFICATION CHANGES
There are no specification changes in this Specification Update revision.
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