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Information in this document is provided in connection with Intel products. Intel assumes no liability whatsoever, including infringement of any patent or
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changes to these specifications at any time, without notice. Microcomputer Products may have minor variations to this specification known as errata.
December 1995
COPYRIGHT
INTEL CORPORATION, 1995
Order Number: 290435-005
28F008SA-L
8-MBIT (1 MBIT x 8) FLASHFILE
TM
MEMORY
Y
High-Density Symmetrically-Blocked
Architecture
D Sixteen 64-Kbyte Blocks
Y
Low-Voltage Operation
D
b
3.3V
g
0.3V or 5.0V
g
10% V
CC
Y
Extended Cycling Capability
D 10,000 Block Erase Cycles
D 160,000 Block Erase
Cycles per Chip
Y
Automated Byte Write and Block Erase
D Command User Interface
D Status Register
Y
System Performance Enhancements
D RY/BY
Y
Status Output
D Erase Suspend Capability
Y
High-Performance Read
D 200 ns Maximum Access Time
Y
Deep Power-Down Mode
D 0.20
m
A I
CC
Typical
Y
SRAM-Compatible Write Interface
Y
Hardware Data Protection Feature
D Erase/Write Lockout during Power
Transitions
Y
Industry Standard Packaging
D 40-Lead TSOP, 44-Lead PSOP
Y
ETOX
TM
III Nonvolatile Flash
Technology
D 12V Byte Write/Block Erase
Intel’s 28F008SA-L 8 Mbit FlashFile
TM
Memory is the highest density nonvolatile read/write solution for solid-
state storage. The 28F008SA-L’s extended cycling, symmetrically-blocked architecture, fast access time, write
automation and very low power consumption provide a more reliable, lower power, lighter weight and higher
performance alternative to traditional rotating disk technology. The 28F008SA-L brings new capabilities to
portable computing. Application and operating system software stored in resident flash memory arrays provide
instant-on, rapid execute-in-place and protection from obsolescence through in-system software updates.
Resident software also extends system battery life and increases reliability by reducing disk drive accesses.
For high-density data acquisition applications, the 28F008SA-L offers a more cost-effective and reliable alter-
native to SRAM and battery. Traditional high-density embedded applications, such as telecommunications,
can take advantage of the 28F008SA-L’s nonvolatility, blocking and minimal system code requirements for
flexible firmware and modular software designs.
The 28F008SA-L is offered in 40-lead TSOP (standard and reverse) and 44-lead PSOP packages. Pin assign-
ments simplify board layout when integrating multiple devices in a flash memory array or subsystem. This
device uses an integrated Command User Interface and state machine for simplified block erasure and byte
write. The 28F008SA-L memory map consists of 16 separately erasable 64-Kbyte blocks.
Intel’s 28F008SA-L employs advanced CMOS circuitry for systems requiring low power consumption and
noise immunity. Its 200 ns access time provides superior performance when compared with magnetic storage
media. A deep power-down mode lowers power consumption to 0.66
m
W typical thru V
CC
, crucial in portable
computing, handheld instrumentation and other low-power applications. The RP
Y
power control input also
provides absolute data protection during system power-up/down.
Manufactured on Intel’s 0.8 micron ETOX process, the 28F008SA-L provides the highest levels of quality,
reliability and cost-effectiveness.
*
Other brands and names are property of their respective owners.