參數(shù)資料
型號(hào)： 28F160B3
廠(chǎng)商： Intel Corp.
英文描述： SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
中文描述： 智能高級(jí)啟動(dòng)3座4 - ，8 - ，16 - ，32 - Mbit閃存家庭
文件頁(yè)數(shù)： 6/48頁(yè)
文件大小： 304K
代理商： 28F160B3
SMART 3 ADVANCED BOOT BLOCK
E
6
PRELIMINARY
1.2
Product Overview
Intel provides the most flexible voltage solution in
the flash industry, providing three discrete voltage
supply pins: V
CC
for read operation, V
CCQ
for output
swing, and V
PP
for program and erase operation. All
Smart 3 Advanced Boot Block flash memory
products provide program/erase capability at 2.7 V
or 12 V [for fast production programming] and read
with V
CC
at 2.7 V. Since many designs read from
the flash memory a large percentage of the time,
2.7 V V
CC
operation can provide substantial power
savings.
The Smart 3 Advanced Boot Block flash memory
products are available in either x8 or x16 packages
in the following densities: (see Ordering Information
for availability.)
4-Mbit (4,194,304-bit) flash memory organized
as 256 Kwords of 16 bits each or 512 Kbytes of
8-bits each
8-Mbit (8,388,608-bit) flash memory organized
as 512 Kwords of 16 bits each or 1024 Kbytes
of 8-bits each
16-Mbit
(16,777,216-bit)
organized as 1024 Kwords of 16 bits each or
2048 Kbytes of 8-bits each
32-Mbit
(33,554,432-bit)
organized as 2048 Kwords of 16 bits each or
4096 Kbytes of 8-bits each
flash
memory
flash
memory
The parameter blocks are located at either the top
(denoted by -T suffix) or the bottom (-B suffix) of the
address map in order to accommodate different
microprocessor protocols for kernel code location.
The upper two (or lower two) parameter blocks can
be locked to provide complete code security for
system initialization code. Locking and unlocking is
controlled by WP# (see Section 3.3 for details).
The Command User Interface (CUI) serves as the
interface
between
the
microcontroller and the internal operation of the
flash memory. The internal Write State Machine
(WSM) automatically executes the algorithms and
timings
necessary
for
operations, including verification, thereby un-
burdening the microprocessor or microcontroller.
The status register indicates the status of the WSM
by signifying block erase or word program
completion and status.
microprocessor
or
program
and
erase
The Smart 3 Advanced Boot Block flash memory is
also designed with an Automatic Power Savings
(APS) feature which minimizes system current
drain, allowing for very low power designs. This
mode is entered following the completion of a read
cycle (approximately 300 ns later).
The RP# pin provides additional protection against
unwanted command writes that may occur during
system reset and power-up/down sequences due to
invalid system bus conditions (see Section 3.6).
Section 3.0 gives detailed explanation of the
different modes of operation. Complete current and
voltage specifications can be found in the DC
Characteristics section. Refer to AC Characteristics
for
read,
program
and
specifications.
erase
performance
2.0
PRODUCT DESCRIPTION
This section explains device pin description and
package pinouts.
2.1
Package Pinouts
The Smart 3 Advanced Boot Block flash memory is
available in 40-lead TSOP (x8, Figure 1), 48-lead
TSOP (x16, Figure 2) and 48-ball
μ
BGA packages
(x8 and x16, Figure 3 and Figure 4 respectively). In
all figures, pin changes necessary for density
upgrades have been circled.
相關(guān)PDF資料
PDF描述
28F800B3 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
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28F016XD 16-Mbit Synchronous Flash Memory(16M位DRAM接口閃速存儲(chǔ)器)
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