參數(shù)資料
型號(hào)： 28F016XD
廠商： Intel Corp.
英文描述： 16-Mbit Synchronous Flash Memory(16M位DRAM接口閃速存儲(chǔ)器)
中文描述： 16兆位同步閃存（1,600位內(nèi)存接口閃速存儲(chǔ)器）
文件頁(yè)數(shù)： 1/54頁(yè)
文件大?。?/td> 760K
代理商： 28F016XD
E
December 1996
Order Number: 290533-004
n
85 ns Access Time (t
RAC
)
Supports both Standard and Fast-
Page-Mode Accesses
n
Multiplexed Address Bus
RAS# and CAS# Control Inputs
n
No-Glue Interface to Many Memory
Controllers
n
SmartVoltage Technology
User-Selectable 3.3V or 5V V
CC
User-Selectable 5V or 12V V
PP
n
0.33 MB/sec Write Transfer Rate
n
x16 Architecture
n
56-Lead TSOP Type I Package
n
Backwards-Compatible with 28F008SA
Command Set
n
2 μA Typical Deep Power-Down Current
n
1 mA Typical I
CC
Active Current in Static
Mode
n
32 Separately-Erasable/Lockable
64-Kbyte Blocks
n
1 Million Erase Cycles per Block
n
State-of-the-Art 0.6 μm ETOX IV Flash
Technology
Intel’s 28F016XD 16-Mbit flash memory is a revolutionary architecture which is the ideal choice for designing
truly revolutionary high-performance products. Combining its DRAM-like read performance and interface with
the intrinsic nonvolatility of flash memory, the 28F016XD eliminates the traditional redundant memory
paradigm of shadowing code from a slow nonvolatile storage source to a faster execution memory, such as
DRAM, for improved system performance. The innovative capabilities of the 28F016XD enable the design of
direct-execute code and mass storage data/file flash memory systems.
The 28F016XD’s DRAM-like interface with a multiplexed address bus, flexible V
and V
voltages, power
saving features, extended cycling, fast program and read performance, symmetrically-blocked architecture,
and selective block locking provide a highly flexible memory component suitable for resident flash component
arrays on the system board or SIMMs. The DRAM-like interface with RAS# and CAS# control inputs allows
for easy migration to flash memory in existing DRAM-based systems. The 28F016XD’s dual read voltage
allows the same component to operate at either 3.3V or 5.0V V
. Programming voltage at 5.0V V
minimizes external circuitry in minimal-chip, space critical designs, while the 12.0V V
option maximizes
program/erase performance. The x16 architecture allows optimization of the memory-to-processor interface.
Its high read performance combined with flexible block locking enable both storage and execution of
operating systems/application software and fast access to large data tables. The 28F016XD is manufactured
on Intel’s 0.6 μm ETOX IV process technology.
28F016XD
16-MBIT (1 MBIT x 16)
DRAM-INTERFACE FLASH MEMORY
相關(guān)PDF資料
PDF描述
28F016XS 16-Mbit Synchronous Flash Memory(16M位同步閃速存儲(chǔ)器)
28F020 5 V Bulk Erase Flash Memory(5V 整體擦寫(xiě)閃速存儲(chǔ)器)
28F128J3A 3 Volt Intel StrataFlash Memory(3 V 128M位Strata閃速存儲(chǔ)器)
28F320J3A 3 Volt Intel StrataFlash Memory(3 V 32M位英特爾StrataFlash存儲(chǔ)器)
28F640J3A 3 Volt Intel StrataFlash Memory(3 V 64M位英特爾StrataFlash存儲(chǔ)器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F016XS 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
28F0181-1SR-10 功能描述:電磁干擾濾波珠子、扼流圈和陣列 115ohms 100MHz 10A Broad Band Frequency RoHS:否 制造商:AVX 阻抗: 最大直流電流:35 mA 最大直流電阻: 容差: 端接類型:SMD/SMT 電壓額定值:25 V 工作溫度范圍:- 25 C to + 85 C 封裝 / 箱體:0603 (1608 metric)
28F020 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F020 2048K (256K X 8) CMOS FLASH MEMORY
28F020-150 制造商: 功能描述: 制造商:undefined 功能描述:
28F020G12 制造商: 功能描述: 制造商:undefined 功能描述:
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