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參數(shù)資料
| 型號： | 28F400BX-TB |
| 廠商： | Intel Corp. |
| 英文描述： | 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| 中文描述： | 4兆位（256 × 16，為512k × 8）啟動(dòng)塊閃存系列 |
| 文件頁數(shù)： | 1/49頁 |
| 文件大?。?/td> | 427K |
| 代理商： | 28F400BX-TB |
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E
PRELIMINARY
May 1997
Order Number: 290580-002
n
Flexible SmartVoltage Technology
2.7V
–3.6V Program/Erase
2.7V–3.6V Read Operation
12V V
PP
Fast Production
Programming
n
2.7V or 1.8V I/O Option
Reduces Overall System Power
n
Optimized Block Sizes
Eight 4-KW Blocks for Data,
Top or Bottom Locations
Up to Thirty-One 32-KW Blocks for
Code
n
High Performance
2.7V–3.6V: 120 ns Max Access Time
n
Block Locking
V
CC
-Level Control through WP#
n
Low Power Consumption
20 mA Maximum Read Current
n
Absolute Hardware-Protection
V
PP
= GND Option
V
CC
Lockout Voltage
n
Extended Temperature Operation
–40°C to +85°C
n
Supports Code Plus Data Storage
Optimized for FDI, Flash Data
Integrator Software
Fast Program Suspend Capability
Fast Erase Suspend Capability
n
Extended Cycling Capability
10,000 Block Erase Cycles
n
Automated Word Program and Block
Erase
Command User Interface
Status Registers
n
SRAM-Compatible Write Interface
n
Automatic Power Savings Feature
n
Reset/Deep Power-Down
1 μA I
CC
Typical
Spurious Write Lockout
n
Standard Surface Mount Packaging
48-Ball
μ
BGA* Package
48-Lead TSOP Package
n
Footprint Upgradeable
Upgradeable from 2-, 4- and 8-Mbit
Boot Block
n
ETOX V (0.4
μ)
Flash Technology
The new Smart 3 Advanced Boot Block, manufactured on Intel’s latest 0.4μ technology, represents a feature-
rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability
(2.7V read, program and erase) with high-speed, low-power operation. Several new features have been
added, including the ability to drive the I/O at 1.8V, which significantly reduces system active power and
interfaces to 1.8V controllers. A new blocking scheme enables code and data storage within a single device.
Add to this the Intel-developed Flash Data Integrator (FDI) software and you have the most cost-effective,
monolithic code plus data storage solution on the market today. Smart 3 Advanced Boot Block Word-Wide
products will be available in 48-lead TSOP and 48-ball μBGA* packages. Additional information on this
product family can be obtained by accessing Intel’s WWW page: http://www.intel.com/design/flcomp.
SMART 3 ADVANCED BOOT BLOCK
WORD-WIDE
4-MBIT (256K X 16), 8-MBIT (512K X 16),
16-MBIT (1024K X 16)
FLASH MEMORY FAMILY
28F400B3, 28F800B3, 28F160B3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 28F410-100M1 | 4M-BIT (512K X 8) CMOS FLASH MEMORY |
| 28F512 | 512K(64Kx8)CMOS FLASH MEMORY |
| 28F640C3 | 3 Volt Advanced Boot Block Flash Memory(3 V 高級快速引導(dǎo)塊閃速存儲(chǔ)器) |
| 28F640J3C-120 | Intel StrataFlash Memory (J3) |
| 28LV64A | 64K (8K x 8) Low Voltage CMOS EEPROM(低壓,64K位, CMOS 并行EEPROM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F400BX-TL/BL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 28F400CE-T/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Boot Block |
| 28F400CV-T/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4-MBIT (256K X 16. 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| 28F410-100M1 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:4M-BIT (512K X 8) CMOS FLASH MEMORY |
| 28F457 | 制造商:General Electric Company 功能描述:Capacitor - 1.75uF 200acV % |
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