參數(shù)資料
型號(hào)： 28F400BX-TB
廠商： Intel Corp.
英文描述： 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY
中文描述： 4兆位（256 × 16，為512k × 8）啟動(dòng)塊閃存系列
文件頁(yè)數(shù)： 16/49頁(yè)
文件大小： 427K
代理商： 28F400BX-TB
SMART 3 ADVANCED BOOT BLOCK
–WORD-WIDE
E
16
PRELIMINARY
(erase suspend to program, erase suspend to read
and program suspend to read) are available only
during suspended operations. These modes are
reached using the commands summarized in
Table 4. A comprehensive chart showing the state
transitions is in Appendix B.
3.2.1
READ ARRAY
When RP# transitions from V
IL
(reset) to V
IH
, the
device will be in the read array mode and will
respond to the read control inputs (CE#, address
inputs, and OE#) without any commands being
written to the CUI.
When the device is in the read array mode, four
control signals must be controlled to obtain data at
the outputs.
WE# must be logic high (V
IH
)
CE# must be logic low (V
IL
)
OE# must be logic low (V
IL
)
RP# must be logic high (V
IH
)
In addition, the address of the desired location must
be applied to the address pins.
If the device is not in read array mode, as would be
the case after a program or erase operation, the
Read Array command (FFH) must be written to the
CUI before array reads can take place.
Table 4. Command Codes and Descriptions
Code
Device Mode
Description
00
Invalid/
Reserved
Unassigned commands that should not be used. Intel reserves the right to
redefine these codes for future functions.
FF
Read Array
Places the device in read array mode, such that array data will be output on the
data pins.
40
Program
Set-Up
This is a two-cycle command. The first cycle prepares the CUI for a program
operation. The second cycle latches addresses and data information and
initiates the WSM to execute the Program algorithm. The flash outputs status
register data when CE# or OE# is toggled. A Read Array command is required
after programming to read array data. See Section 3.2.4.
10
Alternate
Program Set-Up
(See 40H/Program Set-Up)
20
Erase
Set-Up
Prepares the CUI for the Erase Confirm command. If the next command is not
an Erase Confirm command, then the CUI will (a) set both SR.4 and SR.5 of the
status register to a
“1,” (b) place the device into the read status register mode,
and (c) wait for another command. See Section 3.2.5.
D0
Program
Resume
Erase Resume/
Erase Confirm
If the previous command was an Erase Set-Up command, then the CUI will
close the address and data latches, and begin erasing the block indicated on the
address pins. If a program or erase operation was previously suspended, this
command will resume that operation.
During program/erase, the device will respond only to the Read Status Register,
Program Suspend/Erase Suspend commands and will output status register
data when CE# or OE# is toggled.
相關(guān)PDF資料
PDF描述
28F410-100M1 4M-BIT (512K X 8) CMOS FLASH MEMORY
28F512 512K(64Kx8)CMOS FLASH MEMORY
28F640C3 3 Volt Advanced Boot Block Flash Memory(3 V 高級(jí)快速引導(dǎo)塊閃速存儲(chǔ)器)
28F640J3C-120 Intel StrataFlash Memory (J3)
28LV64A 64K (8K x 8) Low Voltage CMOS EEPROM(低壓,64K位, CMOS 并行EEPROM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F400BX-TL/BL 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
28F400CE-T/B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Boot Block
28F400CV-T/B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4-MBIT (256K X 16. 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
28F410-100M1 制造商:MCNIX 制造商全稱:Macronix International 功能描述:4M-BIT (512K X 8) CMOS FLASH MEMORY
28F457 制造商:General Electric Company 功能描述:Capacitor - 1.75uF 200acV %
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*