參數(shù)資料
型號(hào)： 28F800C3
廠商： INTEL CORP
元件分類： DRAM
英文描述： 3 Volt Advanced Boot Block Flash Memory(3 V 高級(jí)快速引導(dǎo)塊閃速存儲(chǔ)器)
中文描述： 16M X 8 FLASH 3V PROM
文件頁(yè)數(shù)： 21/59頁(yè)
文件大?。?/td> 321K
代理商： 28F800C3
E
28F800C3, 28F160C3, 28F320C3
21
PRELIMINARY
Table 9. Block Locking State Transitions
Current State
Erase/Prog
Lock Command Input Result [Next State]
X
Y
Z
WP#
DQ
1
DQ
0
Name
Allowed
Lock
Unlock
Lock-Down
0
0
0
“Unlocked”
Yes
Goes To [001]
No Change
Goes To [011]
0
0
1
“Locked” (Default)
No
No Change
Goes To [000] Goes To [011]
0
1
1
“Locked-Down”
No
No Change
No Change
No Change
1
0
0
“Unlocked”
Yes
Goes To [101]
No Change
Goes To [111]
1
0
1
“Locked”
No
No Change
Goes To [100] Goes To [111]
1
1
0
Lock-Down Disabled
Yes
Goes To [111]
No Change
Goes To [111]
1
1
1
Lock-Down Disabled
No
No Change
Goes To [110]
No Change
NOTES:
1.
In this table, the notation [XYZ] denotes the locking state of a block, where X = WP#, Y = DQ
, and Z = DQ
. The current
locking state of a block is defined by the state of WP# and the two bits of the block lock status (DQ
0
, DQ
1
). DQ
0
indicates if
a block is locked (1) or unlocked (0). DQ
1
indicates if a block has been locked-down (1) or not (0).
At power-up or device reset, all blocks default to Locked state [001] (if WP# = 0). Holding WP# = 0 is the recommended
default.
The
“Erase/Program Allowed” column shows whether erase and program operations are enabled (Yes) or disabled (No)
in that block’s current locking state.
The “Lock Command Input Result [Next State]” column shows the result of writing the three locking commands (Lock,
Unlock, Lock-Down) in the current locking state. For example, “Goes To [001]” would mean that writing the command to a
block in the current locking state would change it to [001].
2.
3.
4.
3.4
128-Bit Protection Register
The 3 Volt Advanced+ Boot Block architecture
includes a 128-bit protection register than can be
used to increase the security of a system design.
For example, the number contained in the
protection register can be used to
“mate” the flash
component with other system components such as
the CPU or ASIC, preventing device substitution.
Additional application information can be found in
Intel application note
AP-657
Designing with the
Advanced+ Boot Block Flash Memory Architecture
.
The 128-bits of the protection register are divided
into two 64-bit segments. One of the segments is
programmed at the Intel factory with a unique 64-bit
number, which is unchangeable. The other segment
is left blank for customer designs to program as
desired.
Once
the
programmed, it can be locked to prevent
reprogramming.
customer
segment
is
3.4.1
READING THE PROTECTION
REGISTER
The protection register is read in the configuration
read mode. The device is switched to this mode by
writing the Read Configuration command (90H).
Once in this mode, read cycles from addresses
shown in Appendix G retrieve the specified
information. To return to read array mode, write the
Read Array command (FFH).
3.4.2
PROGRAMMING THE PROTECTION
REGISTER
The protection register bits are programmed using
the two-cycle Protection Program command. The
64-bit number is programmed 16 bits at a time for
word-wide parts and eight bits at a time for byte-
wide parts. First write the Protection Program Setup
command, C0H. The next write to the device will
latch in address and data and program the specified
location. The allowable addresses are shown in
Appendix G. See Figure 16 for the
Protection
Register Programming Flowchart
.
相關(guān)PDF資料
PDF描述
28F160C3 3 Volt Advanced Boot Block Flash Memory(3 V 高級(jí)快速引導(dǎo)塊閃速存儲(chǔ)器)
28F320D18 1.8 Volt Intel Dual-Plane Flash Memory(1.8 V Intel 雙平面閃速存儲(chǔ)器)
28F320J5 5 Volt Intel StrataFlash Memory(5 V 32M位英特爾StrataFlash存儲(chǔ)器)
28F640J5 5 V Intel StrataFlash Memory(5V 64M位英特爾StrataFlash閃速存儲(chǔ)器)
28F400B3 SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
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28F800F3 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT
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