參數(shù)資料
型號(hào)： 28F640J5
廠商： Intel Corp.
英文描述： 5 V Intel StrataFlash Memory(5V 64M位英特爾StrataFlash閃速存儲(chǔ)器)
中文描述： 5伏特英特爾StrataFlash存儲(chǔ)器（5V的6400位英特爾的StrataFlash閃速存儲(chǔ)器）
文件頁(yè)數(shù)： 1/53頁(yè)
文件大?。?/td> 272K
代理商： 28F640J5
E
PRELIMINARY
May 1999
Order Number: 290606-008
n
High-Density Symmetrically-Blocked
Architecture
64 128-Kbyte Erase Blocks (64 M)
32 128-Kbyte Erase Blocks (32 M)
n
4.5 V
–5.5 V V
CC
Operation
2.7 V–3.6 V and 4.5 V–5.5 V I/O
Capable
n
120 ns Read Access Time (32 M)
150 ns Read Access Time (64 M)
n
Enhanced Data Protection Features
Absolute Protection with
V
PEN
= GND
Flexible Block Locking
Block Erase/Program Lockout
during Power Transitions
n
Industry-Standard Packaging
SSOP Package (32, 64 M)
TSOP Package (32 M)
μBGA* Package (64 M)
n
Cross-Compatible Command Support
Intel Basic Command Set
Common Flash Interface
Scaleable Command Set
n
32-Byte Write Buffer
6 μs per Byte Effective
Programming Time
n
6,400,000 Total Erase Cycles (64 M)
3,200,000 Total Erase Cycles (32 M)
100,000 Erase Cycles per Block
n
Automation Suspend Options
Block Erase Suspend to Read
Block Erase Suspend to Program
n
System Performance Enhancements
STS Status Output
Capitalizing on two-bit-per-cell technology, 5 Volt Intel
StrataFlash memory products provide 2X the bits in
1X the space. Offered in 64-Mbit (8-Mbyte) and 32-Mbit (4-Mbyte) densities, Intel StrataFlash memory
devices are the first to bring reliable, two-bit-per-cell storage technology to the flash market.
Intel StrataFlash memory benefits include: more density in less space, lowest cost-per-bit NOR devices,
support for code and data storage, and easy migration to future devices.
Using the same NOR-based ETOX technology as Intel’s one-bit-per-cell products, Intel StrataFlash
memory
devices take advantage of 400 million units of manufacturing experience since 1988. As a result,
Intel StrataFlash components are ideal for code or data applications where high density and low cost are
required. Examples include networking, telecommunications, audio recording, and digital imaging.
Intel StrataFlash memory components deliver a new generation of forward-compatible software support. By
using the Common Flash Interface (CFI) and the Scaleable Command Set (SCS), customers can take
advantage of density upgrades and optimized write capabilities of future Intel StrataFlash memory devices.
Manufactured on Intel’s 0.4 micron ETOX V process technology, 5 Volt Intel StrataFlash memory provides
the highest levels of quality and reliability.
NOTE:
This document formerly known as
Intel
StrataFlash Memory Technology 32 and 64 Mbit
.
5 VOLT INTEL StrataFlash MEMORY
28F320J5 and 28F640J5 (x8/x16)
相關(guān)PDF資料
PDF描述
28F400B3 SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
28F400BL-TB 4-MBlT (256K x 16, 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY
28F400BV-TB 4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
28F400BX-TB 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY
28F410-100M1 4M-BIT (512K X 8) CMOS FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F640L18 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:StrataFlash Wireless Memory
28F640L30 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:1.8 Volt Intel StrataFlash㈢ Wireless Memory with 3.0-Volt I/O (L30)
28F640P3 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
28F640W30 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
28F650 制造商:Cinch Connectors 功能描述:1 Lug Terminal Strip
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*