參數(shù)資料
型號(hào)： 29F001B-12
廠商： Macronix International Co., Ltd.
英文描述： 1M-BIT [128K x 8] CMOS FLASH MEMORY
中文描述： 100萬(wàn)位[128K的× 8]的CMOS閃存
文件頁(yè)數(shù)： 5/42頁(yè)
文件大?。?/td> 600K
代理商： 29F001B-12
5
REV. 2.6, DEC. 29, 2003
P/N: PM0515
MX29F001T/B
First Bus
Cycle
Second Bus
Cycle
Third Bus
Cycle
Fourth Bus
Cycle
Fifth Bus
Cycle
Sixth Bus
Cycle
Command
Bus
Cycle Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr Data
Addr
Data
Reset
1
XXXH
F0H
Read
1
RD
RD
Read Silicon ID
4
555H
AAH
2AAH
55H
555H
90H
ADI
DDI
Chip Protect Verify
4
555H
AAH
2AAH
55H
555H
90H
(SA)
00H
X02H
01H
Program
4
555H
AAH
2AAH
55H
555H
A0H
PA
PD
Chip Erase
6
555H
AAH
2AAH
55H
555H
80H
555H
AAH
2AAH 55H 555H 10H
Sector Erase
6
555H
AAH
2AAH
55H
555H
80H
555H
AAH
2AAH 55H
SA 30H
Sector Erase Suspend 1
XXXH
B0H
Sector Erase Resume
1
XXXH
30H
Unlock for chip
6
555H
AAH
2AAH
55H
555H
80H
555H
AAH
2AAH 55H
555H
20H
protect/unprotect
TABLE 1. SOFTWARE COMMAND DEFINITIONS
Note:
1. ADI = Address of Device identifier;A1=0, A0 =0 for manufacture code, A1=0, A0 =1 for device code.(Refer to
Table 3)
DDI = Data of Device identifier : C2H for manufacture code, 18H/19H for device code.
X = X can be VIL or VIH
RA=Address of memory location to be read.
RD=Data to be read at location RA.
2. PA = Address of memory location to be programmed.
PD = Data to be programmed at location PA.
SA = Address to the sector to be erased.
3. The system should generate the following address patterns: 555H or 2AAH to Address A0~A10.
Address bit A11~A16=X=Don't care for all address commands except for Program Address (PA) and Sector
Address (SA). Write Sequence may be initiated with A11~A16 in either state.
4. For chip protect verify operation : If read out data is 01H, it means the chip has been protected. If read out data
is 00H, it means the chip is still not being protected.
COMMAND DEFINITIONS
Device operations are selected by writing specific ad-
dress and data sequences into the command register.
Writing incorrect address and data values or writing
them in the improper sequence will reset the device to
the read mode. Table 1 defines the valid register
command sequences. Note that the Erase Suspend
(B0H) and Erase Resume (30H) commands are valid
only while the Sector Erase operation is in progress.
Either of the two reset command sequences will reset
the device(when applicable).
相關(guān)PDF資料
PDF描述
29F001B-90 1M-BIT [128K x 8] CMOS FLASH MEMORY
29F001T-12 1M-BIT [128K x 8] CMOS FLASH MEMORY
29F001T-90 1M-BIT [128K x 8] CMOS FLASH MEMORY
29F002B-12 2M-BIT [256K x 8] CMOS FLASH MEMORY
29F002B-55 2M-BIT [256K x 8] CMOS FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
29F001B-90 制造商:MCNIX 制造商全稱:Macronix International 功能描述:1M-BIT [128K x 8] CMOS FLASH MEMORY
29F001T-12 制造商:MCNIX 制造商全稱:Macronix International 功能描述:1M-BIT [128K x 8] CMOS FLASH MEMORY
29F001T-90 制造商:MCNIX 制造商全稱:Macronix International 功能描述:1M-BIT [128K x 8] CMOS FLASH MEMORY
29F002 制造商:MCNIX 制造商全稱:Macronix International 功能描述:2M-BIT [256K x 8] CMOS FLASH MEMORY
29F002B-12 制造商:MCNIX 制造商全稱:Macronix International 功能描述:2M-BIT [256K x 8] CMOS FLASH MEMORY
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