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參數(shù)資料
| 型號(hào)： | 29F001B-12 |
| 廠商： | Macronix International Co., Ltd. |
| 英文描述： | 1M-BIT [128K x 8] CMOS FLASH MEMORY |
| 中文描述： | 100萬位[128K的× 8]的CMOS閃存 |
| 文件頁數(shù)： | 8/42頁 |
| 文件大?。?/td> | 600K |
| 代理商： | 29F001B-12 |
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8
REV. 2.6, DEC. 29, 2003
P/N: PM0515
MX29F001T/B
SECTOR ERASE COMMANDS
The Automatic Sector Erase does not require the device
to be entirely pre-programmed prior to executing the Au-
tomatic Set-up Sector Erase command and Automatic
Sector Erase command. Upon executing the Automatic
Sector Erase command, the device will automatically
program and verify the sector(s) memory for an all-zero
data pattern. The system does not require to provide
any control or timing during these operations.
When the sector(s) is automatically verified to contain
an all-zero pattern, a self-timed sector erase and verifi-
cation begin. The erase and verification operations are
complete when the data on Q7 is "1" and the data on Q6
stops toggling for two consecutive read cycles, at which
time the device returns to the Read mode. The system
does not require to provide any control or timing during
these operations.
When using the Automatic Sector Erase algorithm, note
that the erase automatically terminates when adequate
erase margin has been achieved for the memory array
(no erase verification command is required). Sector erase
is a six-bus cycle operation. There are two "unlock" write
cycles. These are followed by writing the set-up com-
mand 80H. Two more "unlock" write cycles are then fol-
lowed by the sector erase command 30H. The sector
address is latched on the falling edge of WE, while the
command(data) is latched on the rising edge of WE. Sec-
tor addresses selected are loaded into internal register
on the sixth falling edge of WE. Each successive sector
load cycle started by the falling edge of WE must begin
within 30us from the rising edge of the preceding WE.
Otherwise, the loading period ends and internal auto sec-
tor erase cycle starts. (Monitor Q3 to determine if the
sector erase timer window is still open, see section Q3,
Sector Erase Timer.) Any command other than Sector
Erase (30H) or Erase Suspend (B0H) during the time-out
period resets the device to read mode.
ERASE SUSPEND
This command only has meaning while the state ma-
chine is executing Automatic Sector Erase operation,
and therefore will only be responded during Automatic
Sector Erase operation. Writing the Erase Suspend com-
mand during the Sector Erase time-out immediately ter-
minates the time-out immediately terminates the time-
out period and suspends the erase operation. After this
command has been executed, the command register will
initiate erase suspend mode. The state machine will re-
turn to read mode automatically after suspend is ready.
At this time, state machine only allows the command
register to respond to the Read Memory Array, Erase
Resume and Program commands.
The system can determine the status of the program
operation using the Q7 or Q6 status bits, just as in the
standard program operation. After an erase-suspend pro-
gram operation is complete, the system can once again
read array data within non-suspended sectors.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 29F001B-90 | 1M-BIT [128K x 8] CMOS FLASH MEMORY |
| 29F001T-12 | 1M-BIT [128K x 8] CMOS FLASH MEMORY |
| 29F001T-90 | 1M-BIT [128K x 8] CMOS FLASH MEMORY |
| 29F002B-12 | 2M-BIT [256K x 8] CMOS FLASH MEMORY |
| 29F002B-55 | 2M-BIT [256K x 8] CMOS FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 29F001B-90 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:1M-BIT [128K x 8] CMOS FLASH MEMORY |
| 29F001T-12 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:1M-BIT [128K x 8] CMOS FLASH MEMORY |
| 29F001T-90 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:1M-BIT [128K x 8] CMOS FLASH MEMORY |
| 29F002 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:2M-BIT [256K x 8] CMOS FLASH MEMORY |
| 29F002B-12 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:2M-BIT [256K x 8] CMOS FLASH MEMORY |
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