參數(shù)資料
型號(hào)： 29F001T-90
廠商： Macronix International Co., Ltd.
英文描述： 1M-BIT [128K x 8] CMOS FLASH MEMORY
中文描述： 100萬(wàn)位[128K的× 8]的CMOS閃存
文件頁(yè)數(shù)： 24/42頁(yè)
文件大?。?/td> 600K
代理商： 29F001T-90
24
REV. 2.6, DEC. 29, 2003
P/N: PM0515
MX29F001T/B
AUTOMATIC SECTOR ERASE TIMING WAVEFORM
Sector data indicated by A13 to A16 are erased. External
erase verify is not required because data are erased
automatically by internal control circuit. Erasure comple-
tion can be verified by DATA polling and toggle bit
checking after automatic erase starts. Device outputs 0
during erasure and 1 after erasure on Q7.(Q6 is for toggle
bit; see toggle bit, DATA polling, timing waveform)
AUTOMATIC SECTOR ERASE TIMING WAVEFORM
tAH
Sector
Address0
555H
2AAH
2AAH
555H
555H
Sector
Address1
Sector
Addressn
Vcc 5V
CE
OE
Q0,Q1,
Q4(Note 1)
WE
A13~A16
Q7
A0~A10
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command #30H
Command #30H
Command #30H
Command #55H
Command #AAH
Command #80H
Command #55H
Command #AAH
(Q0~Q7)
Command
In
Command
In
tDH
tDS
tCEP
tCWC
tAETB
tBAL
DATA polling
tCEPH1
tAS
Notes:
(1). Q6:Toggle bit, Q5:Timing-limit bit, Q3: Time-out bit, Q2: Toggle bit
相關(guān)PDF資料
PDF描述
29F002B-12 2M-BIT [256K x 8] CMOS FLASH MEMORY
29F002B-55 2M-BIT [256K x 8] CMOS FLASH MEMORY
29F002B-70 2M-BIT [256K x 8] CMOS FLASH MEMORY
29F002B-90 2M-BIT [256K x 8] CMOS FLASH MEMORY
29F002T-12 2M-BIT [256K x 8] CMOS FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
29F002 制造商:MCNIX 制造商全稱(chēng):Macronix International 功能描述:2M-BIT [256K x 8] CMOS FLASH MEMORY
29F002B-12 制造商:MCNIX 制造商全稱(chēng):Macronix International 功能描述:2M-BIT [256K x 8] CMOS FLASH MEMORY
29F002B-55 制造商:MCNIX 制造商全稱(chēng):Macronix International 功能描述:2M-BIT [256K x 8] CMOS FLASH MEMORY
29F002B-70 制造商:MCNIX 制造商全稱(chēng):Macronix International 功能描述:2M-BIT [256K x 8] CMOS FLASH MEMORY
29F002B-90 制造商:MCNIX 制造商全稱(chēng):Macronix International 功能描述:2M-BIT [256K x 8] CMOS FLASH MEMORY
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