參數(shù)資料
型號(hào)： 29F002B-55
廠商： Macronix International Co., Ltd.
英文描述： 2M-BIT [256K x 8] CMOS FLASH MEMORY
中文描述： 200萬(wàn)位[256K × 8]的CMOS閃存
文件頁(yè)數(shù)： 29/51頁(yè)
文件大小： 622K
代理商： 29F002B-55
29
REV. 1.5, MAR. 28, 2005
P/N: PM0547
MX29F002/002N T/B
Sector data indicated by A13 to A17 are erased. External
erase verification is not required because data are erased
automatically by internal control circuit. Erasure comple-
tion can be verified by DATA polling and toggle bit checking
AUTOMATIC SECTOR ERASE TIMING WAVEFORM
after automatic erase starts. Device outputs 0 during
erasure and 1 after erasure on Q7.(Q6 is for toggle bit; see
toggle bit, DATA polling, timing waveform)
AUTOMATIC SECTOR ERASE TIMING WAVEFORM
tAH
Sector
Address0
555H
2AAH
2AAH
555H
555H
Sector
Address1
Sector
Addressn
Vcc 5V
CE
OE
Q0,Q1,
Q4(Note 1)
WE
A13~A17
Q7
A0~A10
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command #30H
Command #30H
Command #30H
Command #55H
Command #AAH
Command #80H
Command #55H
Command #AAH
(Q0~Q7)
Command
In
Command
In
tDH
tDS
tCEP
tCWC
tAETB
tBAL
DATA polling
tCEPH1
tAS
Notes:
(1). Q6:Toggle bit, Q5:Timing-limit bit, Q3: Time-out bit, Q2: Toggle bit
相關(guān)PDF資料
PDF描述
29F002B-70 2M-BIT [256K x 8] CMOS FLASH MEMORY
29F002B-90 2M-BIT [256K x 8] CMOS FLASH MEMORY
29F002T-12 2M-BIT [256K x 8] CMOS FLASH MEMORY
29F002T-55 2M-BIT [256K x 8] CMOS FLASH MEMORY
29F002T-70 2M-BIT [256K x 8] CMOS FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
29F002B-70 制造商:MCNIX 制造商全稱:Macronix International 功能描述:2M-BIT [256K x 8] CMOS FLASH MEMORY
29F002B-90 制造商:MCNIX 制造商全稱:Macronix International 功能描述:2M-BIT [256K x 8] CMOS FLASH MEMORY
29F002T-12 制造商:MCNIX 制造商全稱:Macronix International 功能描述:2M-BIT [256K x 8] CMOS FLASH MEMORY
29F002T-55 制造商:MCNIX 制造商全稱:Macronix International 功能描述:2M-BIT [256K x 8] CMOS FLASH MEMORY
29F002T-70 制造商:MCNIX 制造商全稱:Macronix International 功能描述:2M-BIT [256K x 8] CMOS FLASH MEMORY
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